Temperature Dependence of Ultrathin Mixed-Phase Ga2O3 Films Grown on the α-Al2O3 Substrate via Mist-CVD
Abhay Kumar Mondal,Loh Kean Ping,Muhammad Aniq Shazni Mohammad Haniff,M. A. Mohd Sarjidan,Boon Tong Goh,Mohd Ambri Mohamed +5 more
TLDR
In this paper , a hot-wall mist chemical vapor deposition (mist-CVD) method has been shown to be effective for the growth of pure α-and β-phase Ga2O3 thin films on the α-Al 2O3 substrate.Abstract:
Alpha (α)- and beta (β)-phase gallium oxide (Ga2O3), emerging as ultrawide-band gap semiconductors, have been paid a great deal of attention in optoelectronics and high-performance power semiconductor devices owing to their ultrawide band gap ranging from 4.4 to 5.3 eV. The hot-wall mist chemical vapor deposition (mist-CVD) method has been shown to be effective for the growth of pure α- and β-phase Ga2O3 thin films on the α-Al2O3 substrate. However, challenges to preserve their intrinsic properties at a critical growth temperature for robust applications still remain a concern. Here, we report a convenient route to grow a mixed α- and β-phase Ga2O3 ultrathin film on the α-Al2O3 substrate via mist-CVD using a mixture of the gallium precursor and oxygen gas at growth temperatures, ranging from 470 to 700 °C. The influence of growth temperature on the film characteristics was systematically investigated. The results revealed that the as-grown Ga2O3 film possesses a mixed α- and β-phase with an average value of dislocation density of 1010 cm–2 for all growth temperatures, indicating a high lattice mismatch between the film and the substrate. At 600 °C, the ultrathin and smooth Ga2O3 film exhibited a good surface roughness of 1.84 nm and an excellent optical band gap of 5.2 eV. The results here suggest that the mixed α- and β-phase Ga2O3 ultrathin film can have great potential in developing future high-power electronic devices.read more
Citations
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Properties of gallium oxide thin film prepared on silicon substrate by spray pyrolysis method
Journal ArticleDOI
Heteroepitaxial Growth of an Ultrathin β-Ga2O3 Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling
Abhay Kumar Mondal,Revathy Deivasigamani,Loh Kean Ping,Muhammad Aniq Shazni Mohammad Haniff,Boon Tong Goh,Ray-Hua Horng,Mohd Ambri Mohamed +6 more
TL;DR: In this article , the authors used a simple solution-processed and nonvacuum mist CVD method to grow a heteroepitaxial β-Ga2O3 thin film at 700 °C using a Ga precursor and carrier gases such as argon and oxygen.
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Hydrothermally Synthesized Ag Decorated Β-Ga2o3 Heterostructures as Low Cost, Reusable Sers Substrates for the Nanomolar Detection of Rhodamine 6g
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Temperature-dependent Schottky diode behavior of Ni Schottky contacts to α-Ga2O3 film epitaxially grown on sapphire substrate
Chel-Jong Choi,Enzo Mondello +1 more
TL;DR: In this paper , Ni Schottky contacts on α-Ga2O3 epitaxial layers were fabricated on a c-plane sapphire substrate and explored their currentvoltage (I-V) characteristics dependence on temperature spanning over a wide temperature range of 100 −425K.
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Characteristics of Vertical Ga2O3 Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film
Venkata Rama,Ajinkya K. Ranade,Pradeep Desai,Bhagyashri Todankar,Golap Kalita,Hiroo Suzuki,Masaki Tanemura,Yasuhiko Hayashi +7 more
TL;DR: In this paper , the authors presented the device properties of a Ni-gallium oxide (Ga2O3) Schottky junction with an interfacial hexagonal boron nitride (hBN) layer.
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