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Temperature Variation of Optical Energy Gap and Deformation Potentials in AgInTe2

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TLDR
In this paper, the optical energy gap E0 of AgInTe2 as a function of temperature T in the range 10 to 300 K was measured by optical absorption measurements. And the variation of E0 with T was fitted well by a Manoogian-Leclerc equation of the form E0(0) − E0 (T) = UT + Vφ (coth φ/2T − 1).
Abstract
Values of the optical energy gap E0 of AgInTe2 as a function of temperature T in the range 10 to 300 K are obtained by optical absorption measurements. The variation of E0 with T is fitted well by a Manoogian-Leclerc equation of the form E0(0) − E0(T) = UT + Vφ (coth φ/2T − 1). Values of (dE0/dT)1, the electron–phonon interaction contribution to the variation of the energy gap with temperature, and (dE0/dT)2, the lattice dilation contribution, are obtained from the Vφ and U terms, respectively. From these values of (dE0/dT)1 and (dE0/dT)2, values are determined for the acoustic deformation potentials of the conduction band Ce and the valence band Ch. Mit Hilfe optischer Absorptionsmessungen wird die optische Energielucke E0 als Funktion der Temperatur T im Bereich von 10 bis 300 K ermittelt. Die Variation von E0 mit T wird gut durch eine Manoogian-Leclerc-Gleichung der Form E0(0) − E0(T) = UT + Vφ (coth φ/2T − 1) approximiert Die Beitrage der Elektron–Phonon-Wechselwirkung, (dE0/dT)2, und der Gitterdilatation, (dE0/dT)1, und werden aus den Vφ- bzw. U-Termen bestimmt. Aus diesen Werten von (dE0/dT)1 und (dE0/dT)2 werden die akustischen Deformationspotentiale des Leitungsbandes, Ce, und des Valenzbandes, Ch, erhalten.

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Citations
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Journal ArticleDOI

Crystal phase-controlled synthesis of rod-shaped AgInTe2 nanocrystals for in vivo imaging in the near-infrared wavelength region

TL;DR: Rod-shaped AgInTe2 nanocrystals exhibiting intense near-band edge photoluminescence in the near-infrared (NIR) wavelength region, were successfully prepared by the thermal reaction of metal acetates and Te precursors in 1-dodecanethiol by increasing the reaction temperature.
Journal ArticleDOI

Optical energy‐gap variation and deformation potentials in CuInTe2

TL;DR: In this paper, the optical energy gap E0 as a function of pressure P up to 3 GPa at room temperature and temperature T in the range 10−300 K at atmospheric pressure were obtained by optical-absorption measurements on samples of CuInTe2.
Journal ArticleDOI

Characterization of AgInTe2 films grown by a hot wall epitaxy technique on KCl substrates

TL;DR: In this article, AgInTe 2 films have been grown by a hot wall epitaxy technique onto KCl substrates kept at different temperatures in a vacuum of 1.3×10 −3 Pa.
Journal ArticleDOI

Optical energy gap values and deformation potentials in four Cu-III-VI2 chalcopyrite compounds

TL;DR: In this paper, the variations of E0 with T were fitted well by a Manoogian-Leclerc equation of the form E0(0, 0)-E0(T, 0)=UT+V phi (coth phi /2T-1).
Journal ArticleDOI

Rod-shaped Zn–Ag–In–Te nanocrystals with wavelength-tunable band-edge photoluminescence in the near-IR region

TL;DR: Rod-shaped nanocrystals (NCs) composed of ZnTe-AgInTe2 solid solution ((AgIn)xZn2(1−x)Te2, ZAITe) were synthesized in a 1-dodecanethiol solution.
References
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Journal ArticleDOI

Optical Properties of Semiconductors

TL;DR: In this article, the real and imaginary parts of the dielectric constant and the function describing the energy loss of fast electrons traversing the materials are deduced from the Kramers-Kronig relations.
Journal ArticleDOI

Temperature Dependence of the Energy Gap in Semiconductors

TL;DR: The effect of lattice vibrations on the energy gap has been treated previously on the basis of broadening rather than shifting of the energy levels as mentioned in this paper, and the effect was found to be negligible for nonpolar crystals, whereas according to their treatment it should be much larger.
Journal ArticleDOI

Transport properties of CuInSe2

TL;DR: In this article, the electrical and thermal properties of CuInSe2 single crystals have been reviewed and in some cases, taking into account recently reported experimental values for the transport parameters, earlier results have been reexamined.
Journal ArticleDOI

Electron and hole conductivity in CuInS2

TL;DR: In this paper, two donor levels, one shallow and one deep (0.35 eV), and one acceptor level at 0.15 eV are identified and the hole mobility data are best fitted with an effective mass m p ∗≅1.3m e, which can be explained by simple, two band k. p theory if the valence band has appreciable d character.
Journal ArticleDOI

Debye temperature and standard entropies and enthalpies of compound semiconductors of the type I-III-VI 2

TL;DR: In this paper, the authors derived the Debye temperature θD in the limit T → O K for all I-III-VI2 compounds, including AgInS2, CuInTe2 and AgGaTe2, and showed that the data scale to one general curve for all 5 compounds considered in this paper.
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