Journal ArticleDOI
The mechanisms of Schottky barrier pinning in III-V semiconductors: Criteria developed from microscopic (atomic level) and macroscopic experiments
TLDR
In this article, the most popular models for the III-V semiconductors are examined in terms of the metal:III-V chemistry including its correlation with barrier height and/or the effect of metal thickness.About:
This article is published in Surface Science.The article was published on 1986-03-03. It has received 46 citations till now. The article focuses on the topics: Schottky barrier.read more
Citations
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Journal ArticleDOI
Band offsets of wide-band-gap oxides and implications for future electronic devices
TL;DR: In this paper, the Schottky barrier heights and band offsets for high dielectric constant oxides on Pt and Si were calculated and good agreement with experiment is found for barrier heights.
Journal ArticleDOI
Semiconductor Junction Gas Sensors
TL;DR: 3.5.3 as discussed by the authors 3.3.4.1.1-3.3-5.5-4.2-1.4-1/3.
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Interfacial properties of semiconducting transition metal chalcogenides
Wolfram Jaegermann,H. Tributsch +1 more
TL;DR: In this paper, the correlation of structural and electronic properies of semiconducting transition metal chalcogenides with molecular surface processes and mechanisms in photoelectrochemistry, (photo)catalysis, geochemistry and hydrometallurgy is discussed.
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d and f metal interface formation on silicon
TL;DR: In this article, a review of the experimental approach to the formation of semiconductor interfaces is presented, with a review on the relevant techniques and a critical review of recent experimental results.
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On the formation of semiconductor interfaces
Fernando Flores,Carlos Tejedor +1 more
TL;DR: A critical review of the different theoretical models proposed for explaining the metal-semiconductor and semiconductor-semiconductor interfaces is presented in this article, where the authors discuss the most relevant information concerning those interfaces.
References
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Metal-semiconductor contacts
TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
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Schottky Barrier Heights and the Continuum of Gap States
TL;DR: In this paper, the Schottky barrier heights for metal-semiconductor interfaces with a variety of metals have been calculated, and they are in excellent agreement with experiment for interfaces with various metals.
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