Journal ArticleDOI
The surface electronic structure of 3–5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers)☆
Reads0
Chats0
TLDR
In this article, the surface electronic structure, sorption of oxygen, and effect of metallic overlayers on cleaved (110) surfaces of GaAs, GaSb, and InP has been studied using photoemission spectroscopy for 2About:
This article is published in Surface Science.The article was published on 1979-07-02. It has received 99 citations till now. The article focuses on the topics: Passivation & Photoemission spectroscopy.read more
Citations
More filters
Journal ArticleDOI
A tunable topological insulator in the spin helical Dirac transport regime
David Hsieh,Yuqi Xia,Dong Qian,Lewis Wray,Jan Hugo Dil,Jan Hugo Dil,Fabian Meier,Fabian Meier,Jürg Osterwalder,Luc Patthey,Joseph Checkelsky,Nai Phuan Ong,Alexei V. Fedorov,Hsin Lin,Arun Bansil,D. Grauer,Yew San Hor,Robert J. Cava,M. Z. Hasan +18 more
TL;DR: The results reveal a spin-momentum locked Dirac cone carrying a non-trivial Berry’s phase that is nearly 100 per cent spin-polarized, which exhibits a tunable topological fermion density in the vicinity of the Kramers point and can be driven to the long-sought topological spin transport regime.
Journal ArticleDOI
Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions.
Yuan Liu,Yuan Liu,Jian Guo,Enbo Zhu,Lei Liao,Sung-Joon Lee,Mengning Ding,Imran Shakir,Vincent Gambin,Yu Huang,Xiangfeng Duan +10 more
TL;DR: The creation of van der Waals metal–semiconductor junctions is reported, in which atomically flat metal thin films are laminated onto two-dimensional semiconductors without direct chemical bonding, creating an interface that is essentially free from chemical disorder and Fermi-level pinning.
Journal ArticleDOI
The structure and properties of metal-semiconductor interfaces
TL;DR: In this article, the contributions of surface science research to the understanding of metal-semiconductor interfaces are surveyed and a wide range of ultra-high vacuum techniques now available for probing metal-semiconductor interfaces on an atomic scale, and assess the current state of knowledge of the chemical, geometrical, and electronic structures of MSS interfaces.
Journal ArticleDOI
Current progress and future challenges in thermoelectric power generation: From materials to devices
TL;DR: In this article, the authors discuss some of the challenges that must be overcome to enable widespread use of thermoelectric power generation (TEG) devices, including thermal stability at the material level, and reliable contact at the device level.
Journal ArticleDOI
Synthesis and properties of antimonide nanowires
TL;DR: This review gives an overview of the field of antimonide nanowires, beginning with a description of the synthesis of these nano-materials, and reviews the data on the physical properties and emerging applications for antimonides, focusing on applications in electronics and optics.
References
More filters
Journal ArticleDOI
Theory of Surface States
TL;DR: In this paper, it was shown that virtual or resonance surface states can exist which behave for practical purposes in the same way as the tails of the metal wave functions rather than separate states.
Book ChapterDOI
Theory of Surface States
TL;DR: In this paper, it was shown that virtual or resonance surface states can exist which behave for practical purposes in the same way as the tails of the metal wave functions rather than separate states.
Journal ArticleDOI
Metal-semiconductor surface barriers
TL;DR: A semi-empirical approach for predicting the type of contact to be expected at an arbitrary metal-semiconductor interface is presented in this paper, where the physical principles underlying the metal-semiconductor barrier are discussed in the light of recent experimental results.
Journal ArticleDOI
Absolute Intensities of the Discrete and Continuous Absorption Bands of Oxygen Gas at 1.26 and 1.065 μ and the Radiative Lifetime of the 1Δg State of Oxygen
TL;DR: The radiative half-life of isolated 1Δg oxygen molecules is estimated to be 45 min, and the effect of gas pressure on the rate of decay has been predicted.
Journal ArticleDOI
Surface reconstruction on semiconductors
TL;DR: In this article, a tight-binding framework using the bond orbital approximation was proposed to simplify the total energy calculation. But the reconstruction of semiconductor surfaces was not considered, and it was shown that the 7 × 7 reconstruction is a pattern of add-atoms rather than (and topologically unrelated to) a patterns of vacancies.