Book ChapterDOI
The Two-Dimensional Electron Gas Field Effect Transistor
B. Vinter
- pp 238-251
TLDR
The role of field effect transistor (FET) is to act as a switch between source and drain this paper, where the gate current is purely a displacement current, and a very small input power can be amplified.Abstract:
A field effect transistor (FET) is a semiconductor device in which the current between two contacts — source and drain — is controlled by the voltage on a third contact — the gate. The role of such devices in electronic circuits is simple in principle. In logic circuits it functions as a switch — depending on the gate voltage the connection between source and drain is broken or closed — and in analogue circuits a small time-varying signal on the gate yields a time-varying current between source and drain, and since the gate current ideally is purely a displacement current, a very small input power can be amplified.read more
Citations
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Journal ArticleDOI
Calculation of phonon‐assisted tunneling between two quantum wells
Thierry Weil,B. Vinter +1 more
TL;DR: In this article, the longitudinal optical phonon scattering between two subbands of a system of two coupled quantum wells is calculated, taking the delocalization of the wave function over the whole structure into account, thus avoiding the shortcomings of earlier computations for thin barriers.
Journal ArticleDOI
Tunneling transfer field-effect transistor: A negative transconductance device
B. Vinter,A. Tardella +1 more
TL;DR: In this article, a double channel field effect structure is proposed in which the resonant tunneling between states in either part of the channel is employed to control the parallel transport in the channel.
Journal ArticleDOI
Modeling of MODFETs
TL;DR: In this article, a review of the current available models of MODFETs and their main capabilities and ranges of applicability are discussed, as well as some conclusions are drawn as to the effort which must be developed in the near future to improve MODFet modeling.
Journal ArticleDOI
Charge dynamics in heterostructure Schottky-gate capacitors and their influence on the transconductance and low-frequency capacitance of MODFETs
TL;DR: In this paper, the gate capacitance and transconductance characteristics of MODFETs and related capacitors are investigated and the quantum-mechanically predicted behavior of single and multiple-heterostructure transistors is in excellent agreement with experiments presented in the literature.
Journal ArticleDOI
Parallel transport of electrons in double quantum wells
B. Vinter,A. Tardella +1 more
TL;DR: In this paper, the authors performed a self-consistent calculation on the mobility of electrons in a double quantum well structure in which the barrier separating the two parts of the channel is sufficiently thin to allow tunnelling, and showed that it is possible to design structures having negative transconductance with a peak-to-valley ratio of 6 at T = 77 K.
References
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Journal ArticleDOI
Transport Properties of GaAs
J. G. Ruch,G. S. Kino +1 more
TL;DR: In this paper, the authors measured the absolute values of the electron drift velocity, the diffusion coefficient, and the trapping time as a function of the electric field and showed that the experimental results are in agreement with the Butcher-Fawcett theory.
Journal ArticleDOI
Electron transport properties in GaAs at high electric fields
J. Požela,A. Reklaitis +1 more
TL;DR: In this article, the three-valley model of GaAs conduction band was used to calculate the electron distribution function, drift velocity, mean energy, valley population fractions and diffusion coefficient.
Book ChapterDOI
Chapter 1 Low-Field Electron Transport
TL;DR: In this paper, the electron transport in crystals subjected to small driving forces, that is, low-field transport, has been studied and extensive data have become available on many of the III-V and II-VI compounds, and detailed comparisons between theoretical and experimental results permit the construction of a generally satisfactory picture of electron physics of these crystals.
Journal ArticleDOI
Electron drift velocity in n-GaAs at high electric fields
Peter A. Houston,A G R Evans +1 more
TL;DR: In this article, the velocity/field curves are presented in the field range 20 to 113 kV/cm at various temperatures from 130 to 400°K, and a simple theory is described which predicts well the saturation velocity.
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