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Journal ArticleDOI

Theory of four-wave mixing wavelength conversion in quantum dot semiconductor optical amplifiers

TLDR
In this paper, a detailed theoretical analysis of four-wave mixing (FWM) wavelength conversion in quantum dot semiconductor optical amplifier (QD-SOA) is presented, taking into account the effect of the multidiscrete QD energy levels and the wetting layer.
Abstract
Detailed theoretical analysis of four-wave mixing (FWM) wavelength conversion in quantum dot semiconductor optical amplifier (QD-SOA) is presented. The model takes into account the effect of the multidiscrete QD energy levels and the wetting layer. Good agreement between calculated and experimental data is obtained. Because of the discreteness of the energy levels, QD-SOAs demonstrate high FWM conversion efficiencies at high detuning frequency. Our calculations show that carrier escape from the ground state significantly affects the performance of the amplifier.

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Citations
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Journal ArticleDOI

Gain dynamics and saturation in semiconductor quantum dot amplifiers

TL;DR: In this article, the authors analyzed the interplay of these two carrier populations in terms of a simple rate equation model based on the steady-state and small-signal properties of the model, and discussed the optical modulation response and four-wave mixing properties of QD semiconductor optical amplifiers.
Journal ArticleDOI

Designing of Optimized All-Optical Half Adder Circuit Using Single Quantum-Dot Semiconductor Optical Amplifier Assisted Mach-Zehnder Interferometer

TL;DR: In this article, a new and novel scheme for a high speed all-optical half adder based on single Quantum-dot semiconductor optical amplifier (QD-SOA) assisted Mach-Zehnder interferometer (MZI) is theoretically investigated and discussed.
Book

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

TL;DR: The Lingnau Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices and its Applications are presented as well as a Discussion of the Foundations of nonlinear and nonequilibriumynamics and their Applications in Electronics.
Journal ArticleDOI

Novel Closed-Form Model for Multiple-State Quantum-Dot Semiconductor Optical Amplifiers

TL;DR: In this article, a novel closed-form model for multiple-state quantum-dot semiconductor optical amplifiers (QD-SOAs) is derived, which takes into account the effect of the ground state, excited state and the wetting layer.
Journal ArticleDOI

Simple model for quantum-dot semiconductor optical amplifiers using artificial neural networks

TL;DR: In this article, a simple, accurate, and fast multilayer feedforward artificial neural network (ANN) model for quantum-dot semiconductor optical amplifiers (QD-SOAs) is developed.
References
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Journal ArticleDOI

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

TL;DR: In this paper, the quantum-dot (QD) excited state carriers were found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long as the excited state is well populated.
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Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

TL;DR: In this paper, the spectral hole-burning and carrier heating were investigated in detail in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers with femtosecond resolution.
Journal ArticleDOI

Four-wave mixing in traveling-wave semiconductor amplifiers

TL;DR: In this paper, the traveling-wave equations of four-wave mixing in semiconductor amplifiers are solved analytically including saturation of the amplifier, and excellent agreement is obtained with numerical solutions of the travelingwave equations.
Journal ArticleDOI

Symmetric highly efficient (/spl sim/0 dB) wavelength conversion based on four-wave mixing in quantum dot optical amplifiers

TL;DR: In this paper, a reduction in linewidth enhancement factor due to the discreteness of the electron states in quantum dots is attributed to the reduction of the linearly-enhanced electron states.
Journal ArticleDOI

Broad-band wavelength conversion based on cross-gain modulation and four-wave mixing in InAs-InP quantum-dash semiconductor optical amplifiers operating at 1550 nm

TL;DR: In this article, a 1550-nm InAs-InP quantum-dash semiconductor optical amplifier with four-wave mixing (FWM) and cross-gain modulation (XGM) was used for short-pulse wavelength conversion over 10 THz and error-free data conversion of a 2.5Gb/s data sequence over 7.5 THz.
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