Journal ArticleDOI
Thermally Stimulated Capacitance (TSCAP) in p‐n Junctions
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TLDR
In this article, high-frequency small-signal capacitances of semiconductor junction vs temperature, from the initial conditions of filled and emptied traps in the junction depletion region, are used to determine the trap concentration and the thermal activation energies of trapped electrons and holes.Abstract:
High‐frequency small‐signal capacitances of semiconductor junction vs temperature, from the initial conditions of filled and emptied traps in the junction depletion region, are used to determine the trap concentration and the thermal activation energies of trapped electrons and holes. Illustrations are given for silicon N + P diodes doped with gold impurity or irradiated with 1‐MeV electrons, showing the room‐temperature annealing for the latter.read more
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Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
TL;DR: Deep Level Transformer Spectroscopy (DLTS) as discussed by the authors is a high-frequency capacitance transient thermal scanning method useful for observing a wide variety of traps in semiconductors, which can display the spectrum of traps as positive and negative peaks on a flat baseline as a function of temperature.
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Transition metals in silicon
TL;DR: In this paper, a review on the diffusion, solubility and electrical activity of 3D transition metals in silicon is given, which can be divided into two groups according to the respective enthalpy of formation of the solid solution.
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Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctions
TL;DR: In this paper, the capacitance transient measurements were extended to intermediate depth impurity and defect states in semiconductors, which greatly enhances the usefulness of capacitance techniques as a tool to study nonradiative recombination.
Journal ArticleDOI
The electronic structure of impurities and other point defects in semiconductors
TL;DR: In this article, a review of the various theoretical methods that have been developed for the study of states introduced by impurities and other point defects in semiconductors is presented, including those of the effective mass type, and a wide range of methods appropriate to deep levels.
Journal ArticleDOI
Admittance spectroscopy of impurity levels in Schottky barriers
TL;DR: In this paper, an exact (i.e., to arbitrary accuracy) solution for the complex admittance of Schottky-barrier diodes as a function of temperature provided a spectroscopy of deep trapping levels.
References
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Journal ArticleDOI
Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments
TL;DR: In this paper, photo and dark current and capacitance transient experiments are described which can provide highly accurate and unique data of the electronic properties of impurity centers in semiconductors such as energy level, multiplicity of charge state, thermal and optical emission rates, thermal capture rates and the dependences of the rates and cross sections on sample temperature, static electric field and photon energy.
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Determination of Electron Trapping Parameters
TL;DR: In this paper, a detailed investigation of different methods for determining electron trap parameters has been made on crystals of CdS−CdSe, for which correct values of the parameters can be calculated from Fermi-level analysis of either decay or TSC data.
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Thermal emission rates of carriers at gold centers in silicon
TL;DR: In this paper, the authors measured the thermal emission rates of electrons and holes at the gold acceptor center (EC − EAu− = 550 mV) and of holes in the gold donor center (EAu+ − EV = 350 mV), respectively, in the temperature range of −160 to +100°C.
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Equations for thermoluminescence and thermally stimulated current as derived from simple models
TL;DR: In this article, an analytical expression for thermoluminescence and thermally stimulated currents is derived for simple models where transitions are strictly localized and transitions are via a band; and where transition transitions are by overlap transfer.
Journal ArticleDOI
II. Correlations Between Thermoluminescence and Thermally Stimulated Conductivity
Peter F. Braunlich,Paul Kelly +1 more
TL;DR: In this article, the relationship between thermoluminescence (TL) and thermally stimulated conductivity (TSC) glow curves is investigated for a single trap depth in the presence of thermally disconnected traps (reservoir for trapped charge carriers) and a single type of recombination centers.