Journal ArticleDOI
Transistor design and thermal stability
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TLDR
In this article, a model for the computation of forward second breakdown due to lateral thermal instability in power transistors is developed, which is based on the finite difference approach, and the effect of device design parameters such as chip thickness, base width, emitter width, base impurity concentration, etc.Abstract:
A model has been developed for the computation of forward second breakdown due to lateral thermal instability in power transistors. The method of analysis is to derive the steady-state current density and temperature distribution of a given transistor design under specified operating conditions, and then to calculate the response of the device to a temperature impulse suddenly applied internally. The current flow calculations have been carried out by using a distributed transistor model, and for the time-dependent heat flow problem the finite difference approach was used. The effect of device design parameters such as chip thickness, base width, emitter width, base impurity concentration, etc., on the thermal stability has been calculated. Also, the effect on transistor stability of the current and voltage operating point, as well as the heat sink temperature, has been analyzed. Information on the stability of a power transistor under pulsed condition is derived by calculating the time constant for thermal runaway. The results of this analysis indicate that the delay time is of the order of 1 ms.read more
Citations
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Journal ArticleDOI
Thermal characterization of power transistors
TL;DR: In this paper, the idealized concept of thermal resistance as applied to power transistors is discussed and various electrical methods for measuring the junction temperature (thermal resistance) of transistors with the emphasis placed on the emitter-only switching measurement technique, which is the preferred standard method of measurement.
Journal ArticleDOI
Two-dimensional carrier flow in a transistor structure under nonisothermal conditions
S.P. Gaur,D.H. Navon +1 more
TL;DR: In this article, a two-dimensional mathematical model is developed to predict the internal behavior of power transistors operating under steady-state conditions, which includes the internal self-heating effects in the transistors and is applicable to predict transistor behavior under high current and high-voltage operating conditions.
Journal ArticleDOI
Theoretical calculations of temperature and current profiles in multi-finger heterojunction bipolar transistors
William Liu,Burhan Bayraktaroglu +1 more
TL;DR: In this article, a theoretical analysis of the temperature profile and current distribution among the fingers for a multi-finger heterojunction bipolar transistor designed for microwave power applications is presented, allowing for arbitrary transistor geometries and non-uniform emitter ballast resistors in the fingers.
Journal ArticleDOI
Second breakdown in power transistors due to avalanche injection
TL;DR: In this article, it is shown that the reverse bias second breakdown potential of a transistor is completely specified by the single parameter V p which is the voltage necessary for avalanche injection, and that the filamentary currents that result from this can in most cases result in device failure.
References
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Journal ArticleDOI
Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point
C. J. Glassbrenner,Glen A. Slack +1 more
TL;DR: The thermal conductivity of single crystals of silicon has been measured from 3 to 1580\ifmmode^\circ\else\text degree\fi{}K and of single crystal of germanium with a radial flow technique as mentioned in this paper.
Journal ArticleDOI
Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
S.M. Sze,J.C. Irvin +1 more
TL;DR: In this paper, the resistivity and mobility data of GaAs at 300°K have been analyzed by least-square method and plotted as a function of the impurity concentration, and measured impurity levels in GaAs have been presented in graphical form for the most accurate and up-to-date values.
Journal ArticleDOI
Second breakdown—A comprehensive review
TL;DR: A comprehensive review of the published literature dealing with the phenomenon of second breakdown in semiconductor devices and the problems it creates in the design, fabrication, testing, and application of transistors is presented in this paper.
Journal ArticleDOI
Thermal instability in power transistor structures
D. Navon,E.A. Miller +1 more
TL;DR: In this paper, thermal instability in power transistor structures, considering effects of design, emitter and base resistance at high currents, was studied. But the authors focused on the effect of design and emitter characteristics.
Journal ArticleDOI
Effect of non-uniform emitter current distribution on power transistor stability☆
D.H. Navon,R.E. Lee +1 more
TL;DR: In this article, the nonuniform emitter current distribution effect on power transistor thermal stability is discussed, and the temperature distribution effects are discussed as a function of the current distribution.