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Validity of the Julliere model of spin-dependent tunneling

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TLDR
In this article, the authors consider spin-dependent tunneling between two ferromagnets separated by a simple step barrier, and examine four models for the magnetoconductance ratio of free electrons tunneling through a barrier.
Abstract
We consider spin-dependent tunneling between two ferromagnets separated by a simple step barrier, and examine four models for the magnetoconductance ratio $\ensuremath{\Delta}G/G:$ A model due to Julliere which characterizes the magnetoconductance solely in terms of the tunneling spin polarization, a model due to Slonczewski which provides an approximate expression for the magnetoconductance of free electrons tunneling through a barrier, the exact expression for the magnetoconductance of free electrons tunneling through a barrier, and the numerical calculation of the magnetoconductance of band electrons in iron tunneling through a barrier. We find that the Julliere model does not accurately describe the magnetoconductance of free electrons tunneling through a barrier. Although Slonczewski's model provides a good approximation to the exact expression for free electrons in the limit of thick barriers, we find that the tunneling of band electrons shows features that are not described well by any free electron picture and which reflect the details of the band structure of iron at the Fermi energy.

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Journal ArticleDOI

Spintronics: Fundamentals and applications

TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
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Measuring the Spin Polarization of a Metal with a Superconducting Point Contact

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Spin polarized tunneling in ferromagnetic junctions

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Extrinsic magnetotransport phenomena in ferromagnetic oxides

TL;DR: In this article, a review of extrinsic magnetotransport effects in ferromagnetic oxides is presented, focusing on grain-boundary, tunnelling and domain-wall magnetoresistance.
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