Journal ArticleDOI
Very large Stark shift in three‐coupled‐quantum wells and their application to tunable far‐infrared photodetectors
Yimin Huang,Chenhsin Lien +1 more
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In this paper, a tunable tunable far-infrared photodetector is proposed based on the infrared absorption by electrons in the ground state transited from the groundstate sub-band E1 of the TCQW to the second excited state sub−band E3.Abstract:
The quantum‐confined Stark effect in the three‐coupled‐quantum‐well (TCQW) structure is studied theoretically in this paper. The basic TCQW structures are composed of three quantum wells separated by two thin barriers. Coupled one‐dimensional Schrodinger and Poisson equations are solved self‐consistently to find the sub‐band eigenenergies and the envelope wave functions for the TCQW structures. Results indicate that the GaInAs/AlGaAs/GaAs two‐depth TCQW structure exhibits both a very large Stark shift and a high absorption coefficient for the 1→3 intersub‐band transition. By using a 1→3 intersub‐band Stark shift in the two‐depth TCQW structure, a highly sensitive tunable far‐infrared photodetector is proposed. This photodetector is ideal for device applications in the 8–14 μm atmospheric window region. The operation of this device is based on the infrared absorption by electrons in the ground state transited from the ground‐state sub‐band E1 of the TCQW to the second‐excited‐state sub‐band E3. A very larg...read more
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Book ChapterDOI
Quantum well infrared photodetectors
Sheng S. Li,Meimei Z. Tidrow +1 more
TL;DR: In this article, a review of the device physics, structures, characteristics, and performance parameters for a wide variety of n-and p-type QWIPs with detection wavelengths ranging from 3.4 to 16 μm are presented.
Journal ArticleDOI
The effects of intense laser field and electric field on intersubband absorption in a double-graded quantum well
E. Kasapoglu,Ismail Sokmen +1 more
TL;DR: In this paper, the authors investigated the intensity dependence of inter-subband absorption coefficient for 1-2 transition in GaAs/Ga1−xAlxAs DGQW under the electric field and showed that the desired energy range or spectral range of interest for intersubband and also interband peak position may be tuned.
Journal ArticleDOI
Shallow donor impurity binding energy in the V-shaped quantum well under the crossed electric and magnetic fields
E. Kasapoglu,Ismail Sokmen +1 more
TL;DR: In this paper, the ground state binding energy of a hydrogenic donor impurity in V-shaped quantum well or full-graded GaAs / Ga 1 - x Al x As quantum wells in the presence of crossed electric and magnetic fields was calculated.
Journal ArticleDOI
Linear and nonlinear optical absorption coefficients and refractive index changes in GaN/AlxGa(1−x)N double quantum wells operating at 1.55 μm
TL;DR: In this paper, the optical absorption coefficients and refractive index changes between the ground and the first excited states in double GaN/AlxGa(1−x)N quantum wells are studied theoretically.
Journal ArticleDOI
Tunability of the optical absorption and refractive index changes in step-like and parabolic quantum wells under external electric field
TL;DR: In this paper, the effects of an external electric field on the energy transitions and optical absorption lineshape in step and parabolic GaAs quantum wells are theoretically investigated, and the energy separations between the three lowest energy levels E1, E2 and E3 and their corresponding wavefunctions are calculated by solving the Schrodinger equation.
References
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Journal ArticleDOI
Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field
Doyeol Ahn,Shun Lien Chuang +1 more
TL;DR: In this article, the authors calculate the electric field dependence of the linear and the third-order nonlinear intersubband optical absorption coefficients of a semiconductor quantum well in the infrared regime.
Journal ArticleDOI
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Journal ArticleDOI
Observation of Stark shifts in quantum well intersubband transitions
Alex Harwit,James S. Harris +1 more
TL;DR: In this article, the authors observed Stark shifts of quantum well intersubband transitions in a perpendicular electric field and applied these tunable transitions to high-speed infrared light modulators.
Book
Materials aspects of GaAs and InP based structures
V. Swaminathan,A. T. Macrander +1 more
TL;DR: In this article, a comprehensive treatment of materials aspects of GaAs, InP and related alloys used in the fabrication of photonic and electronic devices is presented, including point defects and dislocations in III-V compounds.
Journal ArticleDOI
Coupled quantum well semiconductors with giant electric field tunable nonlinear optical properties in the infrared
TL;DR: In this paper, the authors report an in depth study of the properties in the AlInAs/GaInAs heterostructure material system grown by molecular beam epitaxy and show that by judicious control of the tunnel coupling between wells and of the thickness of the latter one can design the wavefunctions and the energy levels in such a may that these new structures behave as quasi-molecules with extremely large dipole matrix elements and strongly field tunable nonlinear optical properties.