scispace - formally typeset
Open AccessJournal ArticleDOI

Wideband semiconductor optical amplifier steady-state numerical model

Michael J. Connelly
- 01 Mar 2001 - 
- Vol. 37, Iss: 3, pp 439-447
TLDR
In this article, a wideband steady-state model and efficient numerical algorithm for a bulk InP-InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier is described.
Abstract
A wideband steady-state model and efficient numerical algorithm for a bulk InP-InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier is described. The model is applicable over a wide range of operating regimes. The relationship between spontaneous emission and material gain is clarified. Simulations and comparisons with experiment are given which demonstrate the versatility of the model.

read more

Citations
More filters
Journal ArticleDOI

Neuromorphic Photonic Integrated Circuits

TL;DR: A framework for understanding the underlying models, and a neuron-like processing device—an excitable laser—that has many favorable properties for integration with emerging photonic integrated circuit platforms are provided.
Journal ArticleDOI

Lasing wavelength and spacing switchable multiwavelength fiber laser from 1510 to 1620 nm

TL;DR: In this article, a flexibly switchable multi-wavelength fiber laser with multiple functionalities like a wide tuning range of lasing wavelength, wavelength spacing, and the number of channels simultaneously was demonstrated.
Journal ArticleDOI

Wide-Band Steady-State Numerical Model and Parameter Extraction of a Tensile-Strained Bulk Semiconductor Optical Amplifier

TL;DR: In this paper, a wide-band steady-state model of a tensile-strained bulk InGaAsP optical amplifier is described, and a parameter extraction algorithm based on the Levenberg-Marquardt method is described.
Journal ArticleDOI

Fast and Efficient Dynamic WDM Semiconductor Optical Amplifier Model

TL;DR: In this article, a state-variable model for semiconductor optical amplifiers (SOAs) that is amenable to block diagram implementation of wavelength division multiplexed (WDM) signals and fast execution times is presented.
References
More filters
Book

Physics of Optoelectronic Devices

TL;DR: In this article, the authors discuss the propagation of light propagation in various media, including waveguide couplers and coupled-mode theory, as well as direct modulation of Semiconductor Lasers.
Journal ArticleDOI

Carrier-induced change in refractive index of InP, GaAs and InGaAsP

TL;DR: In this article, the change in refractive index Delta n produced by injection of free carriers in InP, GaAs, and InGaAsP was theoretically estimated and the results were in reasonably good agreement with the limited experimental data available.
Journal ArticleDOI

Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources

TL;DR: In this article, a small signal method is used to measure the carrier lifetime as a function of injected carrier density, and the results are used to determine the radiative and nonradiative recombination rates for AlGaAs LED's and 1.3 μm InGaAsP lasers.
Journal ArticleDOI

Computer model of an injection laser amplifier

TL;DR: In this article, the authors proposed a model based on numerical solutions of traveling-wave equations, where the noise output of the laser amplifier is treated by traveling-Wave power equations, but the light signal is described by travelingwave equations for its amplitude.
Book

Handbook of semiconductor lasers and photonic integrated circuits

TL;DR: In this article, the authors present a theoretical analysis of semiconductor laser and photonic integrated circuits based on rate-equation analysis and light control and noise properties of laser diodes.