Journal ArticleDOI
ZnSe-Ge heterojunction transistors
H.J. Hovel,A.G. Milnes +1 more
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TLDR
In this paper, the low-frequency common-emitter current gain is analyzed in terms of the injection efficiency and base transport factor, and the gain is constant at low injection levels and varies as a fractional power of the current at higher levels.Abstract:
Heterojunction transistors are described consisting of n ZnSe epitaxially deposited on Ge base-collector junctions. The low-frequency common-emitter current gain is analyzed in terms of the injection efficiency and base transport factor. The injection efficiency is limited by interface recombination and capture-tunneling components in the emitter current, and the transport factor by low base lifetimes resulting from lattice and thermal mismatches involved with heterojunctions. Experimentally, the gain is constant at low injection levels and varies as a fractional power of the current at higher levels. The gain improves with decreased base widths and higher fields. Increasing the emitter resistivity reduces the capture-tunneling component in the emitter current, and increases the gain. Relatively small temperature dependence is observed, with β decreasing slightly at lower temperatures.read more
Citations
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Journal ArticleDOI
GaAsGaAlAs heterojunction transistor for high frequency operation
TL;DR: In this paper, a bipolar transistor structure is proposed for either high frequency operation or integration with certain types of light emitting devices, which involves liquid phase epitaxially grown layers of GaAs for collector and base regions, and of Ga1−xAlxAs for the heterojunction emitter.
Journal ArticleDOI
Switching and Memory Characteristics of ZnSe - Ge Heterojunctions
H. J. Hovel,J. J. Urgell +1 more
TL;DR: In this paper, the effect of temperature on the device parameters is presented, and a model consisting of trap emptying by impact ionization, the formation of current filaments, and the refilling of traps by electron injection is proposed.
Journal ArticleDOI
Double heterojunction GaAs/AlxGa1−xAs bipolar transistors prepared by molecular beam epitaxy
TL;DR: In this article, double heterojunction AlGaAs/GaAs bipolar junction transistors (DHBJT) grown by molecular beam epitaxy (MBE) were fabricated and tested.
Journal ArticleDOI
AlGaAsSb-InGaAsSb HPTs with high optical gain and wide dynamic range
TL;DR: In this paper, a phototransistor with bias of 4.0 V at a wavelength of 2.05 µm was measured at 20/spl deg/C and -20/spl dc/C, respectively, and collector current of 400 nA at low intensity of 0.425 µm and 30 mA at high intensity of 100 µm/cm/sup 2/ were determined.
References
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Journal ArticleDOI
Theory of a Wide-Gap Emitter for Transistors
TL;DR: In this paper, it was shown that the injection deficit of an emitter can be decreased by several orders of magnitude if the emitter has a higher band gap than the base region.
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Properties of gold in silicon
TL;DR: The electrical properties, solubility and diffusion characteristics of gold in silicon are reviewed in this article, where it is observed that theoretical calculations and experimental measurements of the effect of added gold on the resistivity of silicon are not in agreement and that while some of the discrepancies occurring in n-type silicon can be explained, those appearing in the p-type case cannot be resolved at the present time.
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Mobility of Holes and Electrons in High Electric Fields
TL;DR: In this paper, the field dependence of mobility has been determined for electrons and holes in both germanium and silicon, and the observed critical field at 298\ifmmode^\circ\else\textdegree\fi{}K beyond which $\ensuremath{\mu}$ varies as ${E}^{-}\frac{1}{2}}$.
Journal ArticleDOI
Effect of surface recombination and channel on P-N junction and transistor characteristics
TL;DR: In this article, the current flow in a semiconductor junction may be divided into four components according to the location of the recombination and generation of electrons and holes, which are: 1) the bulk recombination-generation or the diffusion current, 2) the large-scale recombination generation current in the transition region, 3) the surface recombinations and the surface channel current.