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Capable of amplifying and switching sound by sound, acoustic transistors have various potential applications and may open the way to the design of conceptual devices such as acoustic logic gates.
Moreover, their quasilinear grouping, attributed to the inner-outer tube (intratube) coupling and its tube spacing dependence, manifests the existence of specific inner-outer tube combinations.
However, vacuum tube amplifiers, which we will usually just call tube amps from now on, have a certain sonic quality that really can’t be duplicated with transistors or op amps.
Moreover, a silica coating on SWNTs would also aid in avoiding tube−tube contact and bundle formation as well as tube oxidation, a scenario conducive to the use of appropriately functionalized carbon nanotubes as individualized gate dielectric materials in field effect transistors.
Y-junction based carbon nanotube (CNT) transistors exhibit interesting switching behaviors, and have the structural advantage that the electrical gate for current modulation can be formed by any of the three constituent branches.
We also explore the miniaturization limits of nanotube transistors, and, on the basis of their switching ratio, we conclude that transistors with channels as short as 50 A would have adequate switching characteristics.
Comparing the dc and optical conductivity measurements we conclude that potassium doping influences differently the non-metallic tube-tube contact regions and the intrinsic on-tube transport.
Carbon Nanotube Field Effect Transistors (CNFETs) were shown to have excellent electrical and unique physical characteristics and are promising candidates to replace silicon transistors in future Very Large Scale Integration (VLSI) designs.
The advantages of transistors over vacuum tubes in radiation instruments have long been realized but a somewhat different approach to circuit design must be followed in developing transistor instruments, as compared with that used in vacuum tube circuits, and this seems to have discouraged many from developing such circuits.
The improvement is attributed to the increase of effective electric conductive tube–tube junctions in the CNT network.
It is shown that the continuously compatible condition reasonably models tube‐in‐tube structures with as few as five stories.
Open accessJournal ArticleDOI
Lu Yang, Klavs F. Jensen 
93 Citations
The presented model yields new insights into the scalability and applicability of the tube-in-tube reactor.
The observed changes in transport properties are explained by the effect of doping on semiconducting SWNTs and tube-tube coupling.