How's the hot carrier effect different in finfets from planar mosfets?
Best insight from top research papers
Hot carrier effects in FinFETs and planar MOSFETs differ in several ways. In FinFETs, the multi-fin structure reduces the impact of hot carrier injection (HCI) on device performance, resulting in less severe degradation of transconductance compared to planar MOSFETs . Additionally, in FinFETs, the body bias effect after hot carrier degradation (HCD) becomes non-negligible, even though it was negligible before HCD . This is due to trap-induced partial shift of the channel current towards the bottom of the fin, which enhances the body-biased effect . On the other hand, in planar MOSFETs, the self-heating effect is more severe in pFinFETs than in nFinFETs, leading to higher hot carrier degradation in pFinFETs . Furthermore, the negative-bias temperature instability (NBTI) mechanism plays a significant role in the higher degradation of pFinFETs compared to nFinFETs . Therefore, the hot carrier effects in FinFETs and planar MOSFETs differ in terms of transconductance degradation, body bias effect, self-heating effect, and NBTI mechanism.
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01 Mar 2023 | The provided paper does not directly compare the hot carrier effect in FinFETs and planar MOSFETs. |
| The provided paper does not directly compare the hot carrier effect in FinFETs and planar MOSFETs. | |
01 Mar 2023 | The provided paper does not directly compare the hot carrier effect in FinFETs and planar MOSFETs. |
| The provided paper does not discuss the hot carrier effect in FinFETs or planar MOSFETs. |
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