Showing papers on "Field effect published in 1978"
TL;DR: In this article, it was shown that the electrical conductivity of carbon polyvinylchloride composites can be attributed to a novel mechanism of tunneling with potential-barrier modulation by thermal fluctuations.
Abstract: We present evidence that in carbon-polyvinylchloride composites, consisting of aggregates of carbon spheres (100-400 \AA{}) dispersed in the insulating matrix, the electrical conductivity can be ascribed to a novel mechanism of tunneling with potential-barrier modulation by thermal fluctuations. Theoretical consideration of the tunneling-probability modification by thermal fluctuating electric field across tunnel junctions yields expressions for the temperature and the field dependences of the conductivity in excellent accord with experimental results.
548 citations
Patent•
05 Jun 1978
TL;DR: In this article, the position of the Fermi level in the volume of the amorphous silicon was modelled as a function of the number of broken chemical bonds in the crystal lattice.
Abstract: A method aiming at imparting to the amorphous silicon properties which are compatible with the possibility of modifying by doping or field effect the position of the Fermi level in the volume of the amorphous silicon, a prime requirement for the operation of semiconductor devices. The method comprises a first step of depositing a layer of amorphous silicon onto a substrate under conditions ensuring the purity of the deposit obtained, then a second step wherein the deposit is subjected to a heat treatment consisting in maintaining the deposit in the atmosphere of a plasma containing atomic hydrogen for saturating the existing broken chemical bonds responsible for a parasitic electric conductivity.
39 citations
TL;DR: In this paper, the electronic structure of subbands and the inter-subband optical absorption spectrum are calculated in an n-channel accumulation layer on the Si (100) surface in strong magnetic fields applied parallel to the surface.
Abstract: The electronic structure of subbands and the inter-subband optical absorption spectrum are calculated in an n-channel accumulation layer on the Si (100) surface in strong magnetic fields applied parallel to the surface. The exchange and correlation effect is taken into account in an approximation scheme based on the density functional formulation. The peak energy of the absorption is shifted to the high energy side almost linearly with the magnetic field. The amount of the shift increases with the electron concentration mainly due to the depolarization field effect. The results agree with experimental results both qualitatively and quantitatively.
30 citations
Patent•
01 Mar 1978TL;DR: In this article, an insulated gate type field effect transistor for high power which has a low conductivity region surrounding a drain region and an offset gate region having a further lower conductivity adjoined thereto, wherein the length and impurity concentration are designed according to the electric characteristics of the transistor.
Abstract: An insulated gate type field effect transistor for high power which has a low conductivity region surrounding a drain region and an offset gate region having a further lower conductivity adjoined thereto, wherein the length and impurity concentration are designed according to the electric characteristics of the transistor. A combination of P channel and N channel type transistors having substantially the same electric characteristics and an audio amplifying circuit using the combination are also disclosed.
24 citations
Patent•
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TL;DR: In this paper, a back-well cell was proposed to convert the radiant energy to electrical energy by using a metal Schottky diode to form an interface between a solar cell and a metal contact.
Abstract: The application discloses a back-well cell, for example, a solar cell which comprises a first semiconductor material of one conductivity type with one face having the same conductivity type but more heavily doped to form a field region arranged to receive the radiant energy to be converted to electrical energy, and a layer of a second semiconductor material, preferably highly doped, of opposite conductivity type on the first semiconductor material adjacent the first semiconductor material at an interface remote from the heavily doped field region. Instead of the opposite conductivity layer, one may employ a metallic layer to form a Schottky diode. If the metallic Schottky diode layer is used, no additional back contact is needed. A contact such as a gridded contact, pervious to the radiant energy may be applied to the heavily doped field region of the more heavily doped, same conductivity material for its contact.
19 citations
TL;DR: In this article, the authors review the use of metal-insulator-semiconductor (MIS-) structures in other areas than normally thought of, such as gas and ion sensing with field effect devices.
Abstract: The purpose of this paper is to review the use of metal-insulator-semiconductor (MIS-) structures in other areas than normally thought of. The new applications, which include gas and ion sensing with field effect devices, have been shown a large interest during the last few years. The content of the paper is to a large extent based on our own research on gas sensitive MIS-devices and on charge storage in organic materials. First we deal with the study of organic insulators (and conductors) with C(V)-techniques. Special attention is paid to charge storage in materials like chlorophyll and fatty acids. Furthermore the work on ion sensitive MIS-structures is reviewed. These devices, which are operated in an electrolyte, are MIS-structures in a broad sense since they normally lack gate metal. A theory is developed for the expected threshold voltage change in the presence of titrable groups on the insulator surface. Finally gas sensitive MIS-structures are discussed. They are based on the use of catalytic metals like Pd or Pt as gate metals of MIS-devices. The ability of these metals to dissociate hydrogen and some hydrogen containing molecules and to dissolve hydrogen atoms has led to the development of devices which are sensitive to small amounts of H2, NH3 and H2S for example. The function of these devices and some recent experimental results are discussed.
14 citations
TL;DR: In this article, measurements relating to molar magnetic susceptibility, dc electrical conductivity and thermoelectric power of Nd, Sm, Eu and Gd are reported.
Abstract: Measurements relating to molar magnetic susceptibility, dc electrical conductivity and thermoelectric power of Nd, Sm, Eu and Gd are reported. The ac electrical conductivity at a few temperature ranges is also given. It is found that it follows the Curie-Weiss law behaviour and this has been attributed to the crystal field effect. The experimental value of Bohr magneton for the magnetic ions has been found to be in good agreement with theory. Thermoelectric power is negative in the measured temperature range suggesting these materials to bep-type semi-conductors and holes as the dominant charge carriers. The results are explained using band theory.
7 citations
Patent•
22 Mar 1978
TL;DR: In this paper, a method of testing a field effect device for radiation hardness was proposed, which comprises the steps of subjecting the device to a low temperature environment, developing a first set of data points by measuring the conductance of the field effect devices as a function of gate voltage at a first substrate bias, and comparing the first and second sets of datapoints to obtain an assessment of radiation hardness.
Abstract: A method of testing a field effect device for radiation hardness. The method comprises the steps of subjecting the field effect device to a low temperature environment, developing a first set of data points by measuring the conductance of the field effect device as a function of gate voltage at a first substrate bias, developing a second set of data points by measuring the conductance of the field effect device as a function of gate voltage at a second substrate bias, which is different from the first substrate bias, and comparing the first and second sets of data points to obtain an assessment of radiation hardness.
7 citations
Patent•
25 Mar 1978
TL;DR: In this article, the authors proposed a method to facilitate the implantation of impurity ions by eliminating the insulation film over well regions to be provided with source, drain regions or thinning insulation film as well as facilitate the production of C-MISFETs having varying threshold characteristics by simultaneously forming wells of two or more kinds of varying concentrations by one implantation and one heat treatment.
Abstract: PURPOSE:To facilitate the implantation of impurity ions by eliminating the insulation film over well regions to be provided with source, drain regions or thinning the insulation film as well as to facilitate the production of plural C-MISFETs having varying threshold characteristics by simultaneously forming wells of two or more kinds of varying concentrations by one implantation and one heat treatment.
5 citations
TL;DR: In this paper, the effect of the laser linewidth on molecular collision processes taking place in a laser field is studied, using an approximation scheme that replaces the actual frequency distribution of the field by a finite number of frequencies and weights.
Abstract: The effect of the laser linewidth on molecular collision processes taking place in a laser field is studied, using an approximation scheme that replaces the actual frequency distribution of the field by a finite number of frequencies and weights. The choice of the frequencies and weights is conveniently accomplished by the method of Gaussian quadrature. Close-coupling calculations are performed on model systems, and the results indicate that the neglect of the laser linewidth may be justified in most collision processes in a laser field.
5 citations
Patent•
31 Aug 1978
TL;DR: In this paper, the semiconductor substrate was etched vertically from its surface, and the gate-electrode lead-out part was formed at a lower part than the cathode region.
Abstract: PURPOSE:To obtain the appropriate structure for a large amount of currents with the voltage drop inside the gate region reduced by etching the semiconductor substrate vertically from its surface, by forming the gate-electrode lead-out part at the lower part than the cathode region, and by making the gate electrode part extremely narrow.
Patent•
10 Jan 1978
TL;DR: In this paper, the authors proposed to increase the integration density by securing such a constitution that the field insulation film can be omitted between the channels of FET formed on the same semiconductor device.
Abstract: PURPOSE:To increase the integration density by securing such a constitution that the field insulation film can be omitted between the channels of FET formed on the same semiconductor device.
Patent•
20 Oct 1978
TL;DR: In this article, a non-center gate SBC (Schottky barrier gate) FET was obtained by forming the mask dividing the source and drain regions into a triangle and evaporating the electrode metal with an angle of 30 degrees against the sample.
Abstract: PURPOSE:To obtain a non-center gate SBC (Schottky barrier gate) FET in which the gates are countinued in parallel, by forming the mask dividing the source and drain regions into a triangle and evaporating the electrode metal with an angle of 30 degrees against the sample.
Patent•
26 Jul 1978
TL;DR: In this paper, the gate electrode Schottky-contacting on the conductive channel side wall projected on the semiconductor substrate was used to manufacture FETs, by providing the gate node with Schottkys contacts on the side wall of the substrate.
Abstract: PURPOSE:To manufacture FET, by providing the gate electrode Schottky-contacting on the conductive channel side wall projected on the semiconductor substrate.
Patent•
08 Jun 1978
TL;DR: In this paper, the authors propose to reduce channel length and stabilize reproducibility by blocking the progression of lateral diffusion along the substrate surface at the gate diffusion with electric insulation layers.
Abstract: PURPOSE:To reduce channel length and stabilize reproducibility by blocking the progression of lateral diffusion along the substrate surface at the gate diffusion with electric insulation layers
Patent•
09 Dec 1978
TL;DR: In this paper, the anti-conduction type impurity ion continuously passes through the surface of the semiconductor substrate while varying the amount of energy and then providing a region which is the same conduction type as the substrate and features a low impurity concentration at the area righ tunder the channel and deep enough from the substrate surface.
Abstract: PURPOSE:To decrease the back-bias dependency of the threshold voltage by injuecting the anti-conduction type impurity ion continuously through the surface of the semiconductor substrate while varying the amount of energy and then providing a region which is the same conduction type as the substrate and features a low impurity concentration at the area righ tunder the channel and deep enough from the substrate surface.
Patent•
12 May 1978
TL;DR: In this paper, the impurity concentration of the substrate is reduced to prevent the variation in threshold voltage by lowering the substrate impurity effect and thus reducing the effect of substrate effect on threshold voltage.
Abstract: PURPOSE:Substrate effect is lowered and the variation in threshold voltage is prevented by lowering the impurity concentration of the substrate.
01 Jan 1978
TL;DR: In this paper, a new type of chemically sensitive semiconductor (CSSD) was designed and built based on the operation of a gate controlled diode, which provides both electrical and chemical shielding of the contact regions from the solution which drives the chemically sensitive layer.
Abstract: There has been a growing need for chemically sensitive semiconductor devices (CSSDs) for such applications as biomedical instrumentation, chemical process control and pollution detection. Recent work on ion sensitive field effect transistors has shown that field effect structures are well suited to these tasks. We have designed and built a new type of CSSD based on the operation of a gate controlled diode. This structure provides both electrical and chemical shielding of the contact regions from the solution which drives the chemically sensitive layer. The ICD is biased into inversion from a reference electrode. The admittance of the ICD is then measured at sufficiently high frequencies that it is transit time limited. Under these conditions, the capacitance-gate voltage response becomes frequency dependent and, at constant capacity, the pH response becomes simply dependent on the frequency.
Patent•
20 Mar 1978
TL;DR: In this article, the lateral surfaces of groove parts forming gate regions at a required angle with respect to the top surface of a semiconductor substrate are tilted to increase gm and inprove high frequency characteristics.
Abstract: PURPOSE:To increase gm and inprove high frequency characteristics by tilting the lateral surfaces of groove parts forming gate regions at a required angle with respect to the top surface of a semiconductor substrate.
TL;DR: The electrical conductivity process in non-crystalline systems in a high electric field has been studied by the computer simulation method and the field dependencies of these systems have been examined for several temperatures.
Patent•
15 May 1978
TL;DR: In this article, the gate junction area was reduced by utilizing the intermediate semiconductor layer among the three semiconductor layers of laminating shape having different conduction types alternately, and determining the minute gate junction extending to the direction of thickness and the channel domain.
Abstract: PURPOSE:To reduce the gate junction area and to increase the high frequency performance and amplification factor, by utilizing the intermediate semiconductor layer among the three semiconductor layers of laminating shape having different conduction types alternately, and determining the minute gate junction extending to thedirection of thickness and the channel domain.
Patent•
28 Oct 1978
TL;DR: In this article, a hard-to-oxidize film was used in a diffusion MOSFET to reduce the despersion of characteristics by eliminating a difference in alignment in a photo resist process.
Abstract: PURPOSE:To reduce the despersion of characteristics by eliminating a difference in alignment in a photo resist process with the use of a hard-to-oxidize film in a diffusion producess of MOSFET.
TL;DR: In this article, the effect of surface states on the measurement of field mobility has been analyzed and it was shown that this effect is important when the rate of change of the surface charge density with respect to the surface potential is larger than the mobile charge density at the conductive channel of the MOSFET.
Abstract: The effect of surface states on the measurement of field mobility has been analyzed. The result shows that this effect is important when the rate of change of the surface charge density with respect to the surface potential is larger than the mobile charge density at the conductive channel of the MOSFET.
Patent•
10 Jun 1978
TL;DR: In this paper, the authors proposed to stabilize the operation of an FET by providing an additional second conductivity type region in the postion away from a protectign device in the FET having a semiconductor device and a protecting device of gate control type junction structure.
Abstract: PURPOSE:To stabilize the operation of an FET by providing an additional second conductivity type region in the postion away from a protectign device in the FET having a semiconductor device and a protecting device of gate control type junction structure.
TL;DR: In this article, the dependence of initial charge on the formation temperature and the polarizing electric field strength of polymethyl methacrylate electrets was investigated and compared with the temperature dependence of the dielectric parameters.
Abstract: Experimental results are reported concerning the dependence of initial charge on the formation temperature and the polarizing electric field strength of polymethyl methacrylate electrets. The data are compared with the temperature dependence of the dielectric parameters.
Patent•
18 May 1978
TL;DR: In this paper, an IGFET of stable characteristics by using a material composed of one of Ta or Nb of a high melting point and high sdhesion to insulation films and Si.
Abstract: PURPOSE:To obtain an IGFET of stable characteristics by using a material composed of one of Ta or Nb of a high melting point and high sdhesion to insulation films and Si.
Patent•
03 Feb 1978
TL;DR: In this article, the authors proposed to provide N type regions under an intermediate oxide film and cut off leakage current in order to prevent the P type inversion of an N type semiconductor substrate under the intermediate oxide layer when voltage is applied to gate electrodes.
Abstract: PURPOSE:To provide N type regions under an intermediate oxide film and cut off leakage current in order to prevent the P type inversion of an N type semiconductor substrate under the intermediate oxide film when voltage is applied to gate electrodes.
Patent•
20 May 1978
TL;DR: In this paper, the gate oxide film is removed from the surface of the P-type diffusion layer after formation of a gate electrode and poly-crysta Si-layer for wiring.
Abstract: PURPOSE:To obtain a complete self-alignment structure by leaving the gate oxide film which remains on the surface of the P-type diffusion layer after formation of a gate electrode and P-type poly-crysta Si-layer for wiring. As a result, the threshold voltage is stabilized, and the under-cut is eliminated for the gate exide film, thus avoiding disconnection of the metal wiring.