Showing papers on "Phase-shift mask published in 2017"

Reconfigurable phase-change photomask for grayscale photolithography

Abstract: We demonstrate a grayscale photolithography technique which uses a thin phase-change film as a photomask to locally control the exposure dose and allows three-dimensional (3D) sculpting photoresist for the manufacture of 3D structures Unlike traditional photomasks, the transmission of the phase-change material photomask can be set to an arbitrary gray level with submicron lateral resolution, and the mask pattern can be optically reconfigured on demand, by inducing a refractive-index-changing phase-transition with femtosecond laser pulses We show a spiral phase plate and a phase-type super-oscillatory lens fabricated on Si wafers to demonstrate the range of applications that can be addressed with this technique

Far-field light imaging in the presence of atmospheric turbulence with rotating anti-phase apertures: Theoretical investigation

Abstract: We investigated the diffraction of far-field light objects in the presence of turbulence formed by an optical system with a rotating anti-phase mask. This mask facilitates to detect the position of faint companion in every direction around the bright companion. In the presence of atmospheric turbulence, diffraction images of distant objects are beyond the diffraction limits, the proposed phase shift mask has a merit to compensate the turbulence results high contrast astronomical imaging under partially coherent light illumination and it is proficient to increase the resolution limits in a Sparrow criterion sense. In this approach, we demonstrated the mask fabrication in laboratory conditions for future prospects and analyse the performance by computing the point spread function of the composite image under various considerations analytically.

Modeling high-efficiency extreme ultraviolet etched multilayer phase-shift masks

Abstract: Achieving high-throughput extreme ultraviolet (EUV) patterning remains a major challenge due to low source power; phase-shift masks can help solve this challenge for dense features near the resolution limit by creating brighter images than traditional absorber masks when illuminated with the same source power. We explore applications of etched multilayer phase-shift masks for EUV lithography, both in the current-generation 0.33 NA and next-generation 0.55 NA systems. We derive analytic formulas for the thin-mask throughput gains, which are 2.42× for lines and spaces and 5.86× for contacts compared with an absorber mask with dipole and quadrupole illumination, respectively. Using rigorous finite-difference time-domain simulations, we quantify variations in these gains by pitch and orientation, finding 87% to 113% of the thin-mask value for lines and spaces and a 91% to 99% for contacts. We introduce an edge placement error metric, which accounts for CD errors, relative feature motion, and telecentricity errors, and use this metric both to optimize mask designs for individual features and to explore which features can be printed on the same mask. Furthermore, we find that although partial coherence shrinks the process window, at an achievable sigma of 0.2 we obtain a depth of focus of 340 nm and an exposure latitude of 39.2%, suggesting that partial coherence will not limit the feasibility of this technology. Finally, we show that many problems such as sensitivity to etch uniformity can be greatly mitigated using a central obscuration in the imaging pupil.

Phase shift mask blank and phase shift mask

Abstract: PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask blank having surface reflectance of equal to or less than binary blank for multi-wavelengths of i-line, h-line, and g-line.SOLUTION: Provided is a halftone type phase shift mask blank 100 used for manufacturing a halftone type phase shift mask. The halftone type phase shift mask blank includes a transparent substrate 101 and a phase shifter layer 105 disposed on one face 101a side of the transparent substrate, in which the phase shifter layer has a phase difference of substantially 180° with respect to three wavelengths of i-line, h-line, and g-line. The phase shifter layer includes a region B103 having a higher refractive index than those of upper and lower regions A104 and C102 at a prescribed depth position D1 between a surface 105a thereof to the center of the thickness of the layer.SELECTED DRAWING: Figure 1

Mask blank, phase shift mask and manufacturing method thereof, and manufacturing method of semiconductor device having an etching stopper film formed of a material containing silicon, aluminum, and oxygen

Abstract: Provided is a mask blank for a phase shift mask, the mask blank being provided with an etching stopper film that satisfies the characteristics of having: higher tolerance than a translucent substrate with respect to dry etching wherein a fluorine-based gas is used when forming a phase shift pattern; higher tolerance with respect to chemical cleaning; and higher transmissivity with respect to exposure light. This mask blank provided with a light blocking film on a main surface of a translucent substrate is characterized by being provided with a structure wherein, on the translucent substrate, an etching stopper film, a phase shift film, and a light blocking film are laminated in this order. The mask blank is also characterized in that: the phase shift film is formed of a material containing silicon and oxygen; and the etching stopper film is formed of a material containing silicon, aluminum, and oxygen.

Mask blank, phase shift mask, phase shift mask manufacturing method, and semiconductor device manufacturing method

Abstract: An object is to provide a mask blank for manufacturing a phase shift mask in which a thermal expansion of a phase shift pattern, which is caused when exposure light is radiated onto the phase shift pattern, and displacement of the phase shift pattern are suppressed to be small. A phase shift film has a function of transmitting exposure light from an ArF excimer laser at a transmittance of 2% or higher and 30% or lower and a function of generating a phase difference of 150° or larger and 180° or smaller between the exposure light that has been transmitted through the phase shift film and the exposure light that has passed through air by a distance equal to a thickness of the phase shift film. The phase shift film is formed of a material containing a metal and silicon, and has a structure in which a lower layer and an upper layer are laminated in the stated order from a transparent substrate side. The lower layer has a refractive index n at a wavelength of the exposure light that is smaller than that of the transparent substrate. The upper layer has a refractive index n at the wavelength of the exposure light that is larger than that of the transparent substrate. The lower layer has an extinction coefficient k at the wavelength of the exposure light that is larger than that of the upper layer. The upper layer has a thickness that is larger than that of the lower layer.

Rigorous 3D electromagnetic simulation of ultrahigh efficiency EUV contact-hole printing with chromeless phase shift mask

Abstract: Contact-hole layer patterning is expected to be one of the first applications for EUV lithography. Conventional absorber masks, however, are extremely inefficient for these layers, placing even more burden on the already challenging source power demands. To address this concern, a chromeless checker-board phase-shift mask for 25- nm dense contacts has been shown to provide a throughput gain of 8x based on characterization with the SHARP EUV microscope and 7x based on micro field patterning with the Berkeley MET. These promising experimental results warrant both assessment for implementation in practice and rigorous simulations for diagnosing 3D mask effects. In this paper we verify the theoretical benefits of phase-shift masks over traditional absorber masks in idealized Kirchhoff analysis, explore the sensitivity of patterning to deviations from the ideal scattered orders, model the etched multilayer using thin-film characteristic matrix analysis, and finally use rigorous 3D Finite-Time Time Domain (FTTD) simulations of etched multilayer masks to explore mitigation of 3D effects to achieve optimal mask designs for minimum-pitch line-space and contact array patterns.

Application of advanced structure to multi-tone mask for FPD process

Abstract: In accordance with improvement of FPD technology, masks such as phase shift mask (PSM) and multi-tone mask (MTM) for a particular purpose also have been developed. Above all, the MTM consisted of more than tri-tone transmittance has a substantial advantage which enables to reduce the number of mask demand in FPD fabrication process contrast to normal mask of two-tone transmittance.[1,2] A chromium (Cr)-based MTM (Typically top type) is being widely employed because of convenience of etch process caused by its only Cr-based structure consisted of Cr absorber layer and Cr half-tone layer. However, the top type of Cr-based MTM demands two Cr sputtering processes after each layer etching process and writing process. For this reason, a different material from the Cr-based MTM is required for reduction of mask fabrication time and cost. In this study, we evaluate a MTM which has a structure combined Cr with molybdenum silicide (MoSi) to resolve the issues mentioned above. The MoSi which is demonstrated by integrated circuit (IC) process is a suitable material for MTM evaluation. This structure could realize multi-transmittance in common with the Cr-based MTM. Moreover, it enables to reduce the number of sputtering process. We investigate a optimized structure upon consideration of productivity along with performance such as critical dimension (CD) variation and transmittance range of each structure. The transmittance is targeted at h-line wavelength (405 nm) in the evaluation. Compared with Cr-based MTM, the performances of all Cr-/MoSi-based MTMs are considered.

Production method of phase shift mask for manufacturing display device

Abstract: PROBLEM TO BE SOLVED: To provide a production method of a phase shift mask by which a phase shift mask can be safely prepared.SOLUTION: The production method includes: a step of preparing a substrate with an etching mask film pattern, which includes a glass substrate 2 and an etching mask film pattern formed on the glass substrate 2 and made of a material having etching durability against a wet etching liquid to be used for etching the glass substrate 2; and a step of forming a phase shift part 8 by engraving the glass substrate 2 by a predetermined amount by wet etching by using the etching mask film pattern as a mask and using an aqueous solution containing a chelating agent neutralized with an inorganic alkali.SELECTED DRAWING: Figure 3

Exposure apparatus, exposure method and method of manufacturing article

Abstract: The invention discloses an exposure apparatus, an exposure method and a method of manufacturing an article. The exposure apparatus uses a phase shift mask to exposure a substrate. The phase shift mask includes a first region and a second region which make the phases of transmission lights different under reference wavelengths. The exposure apparatus is characterized in that the exposure apparatus includes a first changing portion which changes illumination wavelength of the light of the phase shift mask; a projection optical system which projects a pattern image of the phase shift mask to the substrate; a second changing portion which changes spherical aberration of the projection optical system; a control portion which, on the basis of the illumination wavelength which is made by the first changing portion to be different from the reference wavelength and also on the basis of the reference wavelength, controls the changes of the spherical aberration based on the second changing portion, and illuminates the phase shift mask if the illumination wavelength is made different from the reference wavelength, uses the projection optical system which has the spherical aberration which changes on the basis of the illumination wavelength and the reference wavelength to project the pattern image of the phase shift mask to the substrate.

Three-dimensional photolithography using built-in lens mask

Abstract: Three-dimensional lithography processes are required to fabricate the complex structures of advanced MEMS devices. The built-in lens mask has a complex transmittance amplitude and emulates the optical wave planes of arbitrarily shaped images that are to be focused on a focal plane. In our previous work, the authors proposed a novel three-dimensional imaging method using a multifocusing built-in lens mask in a computational simulation study. In this work, the authors study the three-dimensional photolithography process experimentally using this built-in lens mask. A pyramidal frame pattern is used to expose a negative thick resist layer (SU-8), and three-dimensional structures are successfully obtained using a single mask and a single-shot photolithography process. The experimental results agree fairly well with those from the computational simulations.

Phase-shift mask blank for display device manufacture, phase-shift mask for display device manufacture and its manufacturing method, and method for manufacturing display device

Abstract: A phase-shift mask blank for display device manufacture is provided, which comprises a phase-shift film exhibiting an optical property with restrained wavelength dependence with respect to exposure light. A phase-shift mask blank 1 comprises a transparent substrate 2, and a phase-shift film 3 formed on the transparent substrate 2. The phase-shift film 3 comprises a monolayer film or laminated film comprising at least one metal silicide material layer including metal, silicon, and either one element of nitrogen and/or oxygen. In the phase-shift film 3, transmittance at a wavelength of 365nm is between 3.5% and 8% inclusive, phase difference at a wavelength of 365nm is between 160 degrees and 200 degrees inclusive, and wavelength-dependent variation of transmittance within a wavelength range between 365nm and 436nm inclusive is within 5.5%.

Manufacturing method for phase shift mask blank phase shift mask and display device

Abstract: To provide a phase shift mask blank for use in obtaining a fine and high-accuracy pattern and a phase shift mask prevented from occurrence of concave defects while reducing the amount of consumption of an etching liquid during manufacture of the phase shift mask. A phase shift mask blank 10 has a phase shift film 12, an etch stop film 13, and a light-shielding film 14 which are successively formed on a transparent substrate 11. The phase shift film 12 is made of a chromium compound containing chromium and at least one of oxygen, nitrogen, carbon, and fluorine. The etch stop film 13 is made of a metal silicide compound containing a metal and silicon. The phase shift film 12 and the light-shielding film 14 are made of materials etchable by a same etching liquid A and are adjusted so that a wet etching rate of the light-shielding film 14 for the etching liquid A is higher than that of the phase shift film 12 for the etching liquid A. The etch stop film 13 is made of a material having etch resistance against the etching liquid A for the light-shielding film 14. A thickness, a material, and a composition ratio of the etch stop film 13 are adjusted so that a time required for removing the etch stop film 13 by an etching liquid B capable of etching the etch stop film 13.

Attenuated phase shift mask and manufacturing method thereof

Abstract: The invention provides an attenuated phase shift mask and a manufacturing method thereof and relates to the technical field of semiconductors. The method comprises the steps of providing a transparent substrate and forming a graphical phase shift layer and a shading layer on the phase shift layer in an edge region on the transparent substrate; and forming a non-conductive oxide layer on the surface of the shading layer. According to the attenuated phase shift mask and the manufacturing method thereof, the defect problem of adhesion of small particles, caused by electrostatic adsorption, of the attenuated phase shift mask in a specific cleaning machine can be solved through oxidizing the conductive shading layer on the surface of the attenuated phase shift mask into a non-conductive oxide, so that the attenuated phase shift mask can be permitted to be further cleaned on the cleaning machine, the utilization rate of the machine is improved, the machine does not need to be replaced and the process complexity and the cost do not need to be increased.

New PSM optimized for stable resolution of fine holes in FPD

Abstract: Recently, due to increases in the definition of high function panels for mobile devices such as smartphones and tablets, LCD panel TFT and OLED (organic electro luminescence display) circuits are becoming increasingly denser and more miniaturized by the year. TFT and OLED circuits are composed of several layers, such as gate, semiconductor and contact hole (C / H). It is particularly difficult to obtain a stable resolution for C/H due to the decrease in the C/H process margin (EL, DOF, MEEF) as a result of increases in the density of the circuit. Moreover, C/H productivity has also markedly decreased due to an increase in the exposure dose. In response to this, attenuated phase shift mask (Att. PSM) for large size photomasks have been proposed as a means to improve the process margin in FPD. We have developed new PSM that can further improve the process margin and the productivity of C/H via the effective positioning of a high transmittance phase shift film. Using a 1.5um sized hole as the target, we confirmed the improvement effect of the optimized PSM via a software simulation and an exposure test. Hereafter it is necessary for us to optimize the new PSM for each panel process so as to allow us to use this mask in actual processes.

Mask blank, phase-shift mask, method of manufacturing mask blank, method of manufacturing phase-shift mask and method of manufacturing semiconductor device

Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film. A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a function to transmit ArF exposure light therethrough at a predetermined transmittance and generate a predetermined amount of phase shift in the ArF exposure light that is transmitted therethrough, wherein the phase-shift film comprises a structure in which a low transmission layer and a high transmission layer are laminated, the low transmission layer and the high transmission layer are formed from a material consisting of silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from semi-metallic elements, non-metallic elements and noble gases, and the low transmission layer has a relatively low nitrogen content in comparison with the high transmission layer.

Phase shift mask blank plate, phase shift mask and method for manufacturing display apparatus

Abstract: The invention provides a phase shift mask blank plate, a phase shift mask and a method for manufacturing a display apparatus. The phase shift mask blank plate herein suppresses the consumption amount of an etching liquid in manufacturing a phase shift mask, and is intended for obtaining fine and accurate patterns and producing no recession. The phase shift mask blank plate (10) is formed on a transparent base material (11) by successively forming a phase shift mask (12), an etching resistance mask (13), and a photomask (14). The phase shift mask (12) is constituted by a chromium compounds which contains a chromium and is selected from at least one of oxygen, nitrogen, carbon, fluorine. The etching resistance mask (13) is constituted by a metal silicide which contains metal and silicon. The phase shift mask (12) and the photomask (14) are made of a material which can be etched by the same etching liquid A, and it is faster to adjust wet etching of the etching liquid A on the phase shift mask (12) to the wet etching of the etching liquid A on the photomask (14). The etching resistance mask (13) is an etching resistance material to the etching liquid A of the photomask (14), and the mask thickness, material and composition ratio of the etching resistance mask (13) is adjusted, such that the etching resistance mask (13) has less than 15 minutes until the etching resistance mask (13) is stripped by an etching liquid B which can etch the etching resistance mask (13).

Phase shift mask blank, phase shift mask and method of manufacturing a display device

Abstract: To provide a phase shift mask blank for use in obtaining a fine and high-accuracy pattern and a phase shift mask prevented from occurrence of concave defects while reducing the amount of consumption of an etching liquid during manufacture of the phase shift mask. A phase shift mask blank 10 has a phase shift film 12, an etch stop film 13, and a light-shielding film 14 which are successively formed on a transparent substrate 11. The phase shift film 12 is made of a chromium compound containing chromium and at least one of oxygen, nitrogen, carbon, and fluorine. The etch stop film 13 is made of a metal silicide compound containing a metal and silicon. The phase shift film 12 and the light-shielding film 14 are made of materials etchable by a same etching liquid A and are adjusted so that a wet etching rate of the light-shielding film 14 for the etching liquid A is higher than that of the phase shift film 12 for the etching liquid A. The etch stop film 13 is made of a material having etch resistance against the etching liquid A for the light-shielding film 14. A thickness, a material, and a composition ratio of the etch stop film 13 are adjusted so that a time required for removing the etch stop film 13 by an etching liquid B capable of etching the etch stop film 13.

Method of producing mask blank, method of producing phase shift mask and method of producing semiconductor device

Abstract: PROBLEM TO BE SOLVED: To provide a method of producing a mask blank comprising a phase shift film that has high resistance to an exposure light of ArF excimer laser and has a reduced film stress.SOLUTION: The method of producing a mask blank includes a phase shift film formation step of forming a phase shift film containing silicon nitride system material layer by reactive sputtering in a sputtering gas containing nitrogen gas, krypton gas and helium gas by using a silicon target, or a target made of a material containing silicone and one or more elements selected from a metalloid elements and nonmetallic elements, and a step of performing heating processing at a temperature of 300°C or higher.SELECTED DRAWING: Figure 1

Phase shift mask and manufacturing method thereof

Abstract: A phase shift mask including a substrate, a phase shift layer and a transparent layer is provided. The phase shift layer is disposed on the substrate and has an opening. The transparent layer is disposed in the opening. The phase shift mask can have a large DOF window.

Chromeless phase shift mask structure and process

Abstract: The present disclosure provides a phase shift mask. The phase shift mask includes a transparent substrate; an etch stop layer disposed on the substrate; and a tunable transparent material layer disposed on the etch stop layer and patterned to have an opening, wherein the tunable transparent material layer is designed to provide phase shift and has a transmittance greater than 90%.

Phase shift mask blank, manufacturing method thereof, phase shift mask, manufacturing method thereof, and manufacturing method of display device

Abstract: PROBLEM TO BE SOLVED: To provide a phase shift mask blank that can be formed in a sectional shape exhibiting a phase effect effectively by wet etching.SOLUTION: The phase shift mask blank includes: a transparent substrate; a light semitransmissive film configured with a metal silicide based material and formed on a main surface of the transparent substrate; and an etching mask film configured with a chromium based material and formed on the light semitransmissive film. A composition inclined region P is formed in an interface between the light semitransmissive film and the etching mask film. In the composition inclined region P, a proportion of a component that slows a wet etching speed of the light semitransmissive film increases gradually and/or continuously toward a depth direction.SELECTED DRAWING: Figure 5

Phase-shift mask semi-finished product, method for manufacturing phase-shift mask and method for manufacturing display device

Abstract: The present invention provides a phase-shift mask semi-finished product having an excellent pattern cross-sectional shape and excellent CD uniformity and for forming a phase-shift mask for a display device with a fine pattern. A phase-shift film composed of a chromium-based material provided on a transparent substrate comprises a phase-shift layer, a reflectance-reducing layer, and a metal layer disposed between the phase-shift layer and the reflectance-reducing layer and having a higher extinction coefficient than the extinction coefficient of the reflectivity reduction layer within the wavelength region of 350 nm to 436 nm. The transmittance for the exposure light and phase difference of the phase-shift film satisfy the predetermined optical characteristics necessary for the phase shift film, and the reflection rate of the surface of the phase-shift film is 10% or less in the wavelength region of 350 nm to 436 nm.

Lithography and Resist Reflow for the BEOL

Abstract: This paper presents data obtained in developing a lithography process for the metal and via levels using a firstgeneration 193 nm stepper and first generation 193 nm photoresist. For the line/space levels, process windowsobtained using chrome on glass (COG) and phase shift masks are presented. The effect ofprint bias (wafer - mask dimension) on process window is shown. At 280 nm pitch, process windows for COG and phase shift masks arecompared. When using a phase shift mask to print 245 nm pitch, thinner resist is shown to increase the processwindow. Results are shown for printing 245 nm pitch with a COG mask.For contact hole and via levels, a resist reflow process was investigated with the same resist used for theline/space levels. In this process contact holes are printed larger than required and then reduced in size by heatingthe resist and causing it to flow. The results obtained with different mask dimensions and different wafer criticaldimension (CD) targets are discussed. Results show that a process could be developed for printing 150 nmcontact holes with 400 nm depth of focus at 5 % exposure latitude. Finally, the through-pitch behavior as afunction ofreflow bake temperature is shown. Although the more isolated vias tend to show more shrinkage thanthe nested vias, it is shown that the deviation in size through pitch can be controlled by adjusting the maskdimension.KEYWORDS: lithography, photoresist, optical proximity correction, lithography process window, resolutionenhancement, resist reflow, contact hole printing

Phase shift mask blank for manufacturing display device, phase shift mask for manufacturing display device, and method for manufacturing display device

Abstract: PROBLEM TO BE SOLVED: To provide a phase shift mask blank for manufacturing a display device, which has a phase shift film showing such optical characteristics that wavelength dependency on exposure light is suppressed.SOLUTION: A phase shift mask blank 1 includes a transparent substrate 2 and a phase shift film 3 formed on the transparent substrate 2. The phase shift film 3 is composed of a monolayer film or a multilayer film having at least one layer of a metal silicide material layer comprising metal, silicon and nitrogen. The phase shift film 3 has a transmittance of 3.5% or more and 8% or less at a wavelength of 365 nm and a phase difference of 160 degrees or more and 200 degrees or less at a wavelength of 365 nm, in which a change amount of the transmittance in the wavelength range from 365 nm to 436 nm, depending on wavelengths, is within 5.5%.SELECTED DRAWING: Figure 1

Mask blank, manufacturing method of phase shift mask and manufacturing method of semiconductor device

Abstract: PROBLEM TO BE SOLVED: To provide a blank mask for manufacturing a phase shift mask capable of forming high accuracy and fine pattern on a light-shielding film.SOLUTION: There is provided a mask blank having a phase shift film consisting of a material containing silicon, chromium, a light-shielding film, and a hard mask film consisting of a material containing one or more elements selected from silicon and tantalum arranged on a light transmissive substrate in this order, the light-shielding film is a single layer film having a composition gradient part with increased oxygen content in a surface in opposite side to the phase shift film side and neighboring area thereof, chromium content is 50 atom% or more, a ratio of carbon content divided by total content of chromium, carbon and oxygen in a part excluding the composition gradient part is 0.1 or more, a ratio of carbon content divided by total content of chromium and carbon in the part excluding the composite gradient part is 0.14 or more and nitrogen content is detection limit value or less in a composition analysis by an X-ray photoelectron spectroscopy.SELECTED DRAWING: Figure 1

Large sized phase shift mask and manufacturing method of large sized phase shift mask

Abstract: PROBLEM TO BE SOLVED: To provide a structure of a semi-transparent phase shift mask suitable for forming a fine pattern in a large sized photomask used for manufacturing a liquid crystal panel or an EL panel and a manufacturing method therefor, further a structure suppressing generation of side peaks generated when light is exposed to the pattern using the semi-transparent phase shift mask.SOLUTION: In a pattern having a transparent area arranged neighboring at both sides of a semi-transparent phase shift area formed on a transparent substrate, a structure suppressing generation of side peaks with improving contrast of a light exposure strength distribution is constructed by setting light transmittance of the semi-transparent phase shift area in a range of 4% to 30% and width in a range of 1 μm to 5 μm.SELECTED DRAWING: Figure 1

Mask blank, phase shift mask, and semiconductor device production method

Abstract: Provided is a mask blank which makes it possible to suppress chrome migration. This mask blank is provided with a structure obtained by stacking, in order, a phase shift film and a light shielding film on a translucent substrate. The phase shift film has a function for transmitting ArF exposure light at a transmission rate of 2-30%, inclusive, and a function for generating a phase difference of 150-200 degrees, inclusive, with respect to the transmitted ArF exposure light, and includes a structure that is formed from a material contains silicon and is substantially free of chrome, and is obtained by stacking a lower layer from the translucent substrate side and an upper layer. The lower layer has a smaller refractive index n than the translucent substrate, and the upper layer has a larger refractive index n than the translucent layer. The lower layer has a smaller extinction coefficient k than the upper layer. The light shielding film includes a layer in contact with the phase shift film, the layer in contact with the phase shift film comprises a material containing chrome, has a smaller refractive index n than the upper layer, and has a larger extinction coefficient k than the upper layer.