Showing papers on "Responsivity published in 1972"
TL;DR: In this paper, a thermally fast absorbing black was used to obtain broad spectral response with approximately 50% absorption from 0.3 μ to greater than 50 μ, and transferred 90% of the absorbed energy to the pyroelectric crystal in 400 psec.
Abstract: We have designed and tested a 500‐psec‐rise‐time pyroelectric detector. The responsivity is great enough to drive a Tektronix 519 oscilloscope when amplified with a 1.0‐GHz‐bandwidth amplifier. To obtain broad spectral response we have developed a thermally fast‐absorbing black which has approximately 50% absorption from 0.3 μ to greater than 50 μ, and transfers 90% of the absorbed energy to the pyroelectric crystal in 400 psec. The maximum detector output voltage prior to amplification is 2. 0 V, limited by the absorbing black's burn intensity.
27 citations
TL;DR: In this article, the responsivity and the noise equivalent power (NEP) of Josephson junctions in video detection of microwave and millimeter-wave radiation have been calculated.
Abstract: The responsivity and the noise equivalent power (NEP) of Josephson junctions in video detection of microwave and millimeter‐wave radiation have been calculated. The sensitivity to radiation is assumed to be limited by the rounding of the voltage‐current curve due to thermal noise of both the source resistance and the junction resistance. The calculated NEP is at least several tens of times better than any experimentally established.
13 citations
TL;DR: In this article, a medium wavelength infrared detector array using a radio frequency multicathode sputtering system was developed by using a new technique using a Radio Frequency Multicathode Sputtering System (RFMS).
12 citations
TL;DR: In this paper, the photon drag voltage in germanium varies with hole concentration and how it depends on temperature, and some considerations are taken into the following additional contributions similar to the photon Drag effect: (1) the Thomson effect, (2) the hot carrier effect and (3) the diffusion effect.
Abstract: It is described how the photon drag voltage in germanium varies with hole concentration and how it depends on temperature. Also some considerations are taken into the following additional contributions similar to the photon drag effect: (1) the Thomson effect, (2) the hot carrier effect and (3) the diffusion effect. Experiments were performed by using a Q-switched CO2 laser. This photon drag effect provides a convenient detector for use with Q-switched CO2 lasers and mode-locked CO2 lasers, because it operates with the high speed response time smaller than 10-10 s at room temperature. In the case of p-type germanium with the resistivity of 2.3 Ω-cm and the size of 1.5×1.5×20 mm3, its responsivity (R) is 3×10-6(V/W) and the detectivity (D) is 1.4×103(W-1) at room temperature and 1.1×104(W-1) at 77 K.
12 citations
TL;DR: In this article, the theory of low-temperature ac capacitance bolometer was developed, and it was shown that both the responsivity and detectivity are maximized by the bias current if ∂∊/∂T and ∂ tanδ/ ∂T are positive.
Abstract: The theory of the low-temperature ac capacitance bolometer is developed, and it is shown that both the responsivity and detectivity are maximized by the bias current if ∂∊/∂T and ∂ tanδ/∂T are positive. Certain SrTiO3 glass-ceramics meet these conditions at helium temperatures, and the optimum bolometric characteristics are estimated using literature data for the dielectric and thermal properties. Assuming a 16-Hz chopping frequency and 10-ms time constant (which is shown to be consistent with the thermal data), the results are that the responsivity (times the square root of the detector area) varies from 3×106 to 2×105 V W−1 cm from 0.3 to 10 K. The corresponding variation of the detectivity is from 7×1012 to 6×1010 cm W−1Hz−12. Comparisons with other low-temperature thermal detectors are given.
10 citations
TL;DR: In this paper, a field effect modified bipolar transistor (FEM) transistor was developed for photo-sensing with a novel technique of reducing the effective collector capacitance without reducing the total primary photocurrent.
Abstract: A new photosensing device that can be described as a field-effect modified bipolar transistor, has been developed. A novel technique of reducing the effective collector capacitance without reducing the total primary photocurrent provides for a decade improvement in responsivity for the FEM phototransistor operating in the charge-storage mode. Other applications of this device include a high noise-immunity inverter, a light intensity-to-frequency converter, and a simple semiconductor memory element. FEM transistors can be fabricated using the same processing schedule used for conventional bipolar transistors; no additional steps are required.
7 citations
01 Jan 1972
TL;DR: In this article, the authors present the analysis, design, fabrication and evaluation of low light level, anti-blooming, charge-coupled device (CCD) image sensors in line and area arrays.
Abstract: We present the analysis, design, fabrication and evaluation of low light level, anti-blooming, charge-coupled device (CCD) image sensors in line and area arrays. The transfer of low light level charge is determined by the non-linear electric field beneath the gate electrode. The CCD image sensor array is analyzed with a figure-of-merit which is the product of signal-to-noise (S/N) and modulation transfer function (MFT). The noise equivalent signal (NES), S/N = 1, is formulated at the system output and referenced to the readout diode. The CCD arrays use a 2-phase, stepped-oxide, clock system with interline transfer. Front surface imaging is achieved with thin silicon-gate electrodes (1000-2000 A) which also serve as a "field shield" and the bottom layer of the lower phase line. The lowerphase line is constructed with an aluminum-silicon sandwich to provide low charging time constants (< 5 nsec) and reduce the incidence of phase line-to-line substrate shorts over large areas. The upper phase line is aluminum and a 3rd level aluminum forms a light shield over the interline shift-registers and CMOS readout circuit. The latter in combination with an analog signal processor provides a low-noise, composite video output signal. A unique cell design is used to combine active CCD sensor, interline shift-register, transfer gate and "stopper" diffusions into compact 2 mil centers in the area array. 1 × 128 element line arrays and 75 × 100 element area arrays are discussed in terms of individual elements NES, responsivity and spectral response.
4 citations
TL;DR: In this paper, the enhancement factor of a trigricyne sulphate (TGS) pyroelectric detector is measured as 40 ∼ 50 at the mechanical resonances whose modes are assigned to dilational modes of a rectangular plate vibrator.
Abstract: It is pointed out that responsivity can be improved by mechanical resonances. The enhancement factor of responsivity of a trigricyne sulphate (TGS) pyroelectric detector is measured as 40 ∼ 50 at the mechanical resonances whose modes are assigned to dilational modes of a rectangular-plate vibrator. Also, a pyroultrasonic parametric amplifier is demonstrated, which can show further improvement of responsivity of the pyroelectric detector by amplifying the strain that accompanies pyroelectricity. Gain and an equivalent circuit are derived using a simplified parametrically coupled multimode vibrator model. A pyroultrasonic parametric amplifier using lead zirconate titanate (PZT) ceramic is demonstrated, and an improvement of about 5 dB is shown. Obtaining the gain stability is one of the serious problems of a pyroultrasonic parametric amplifier.
3 citations