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A. V. Korulin
Researcher at Unitary enterprise
Publications - 9
Citations - 139
A. V. Korulin is an academic researcher from Unitary enterprise. The author has contributed to research in topics: Doping & Irradiation. The author has an hindex of 6, co-authored 9 publications receiving 130 citations.
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Journal ArticleDOI
Alpha particle detection with GaN Schottky diodes
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,A. V. Markov,E. A. Kozhukhova,I. M. Gazizov,N. G. Kolin,D. I. Merkurisov,V. M. Boiko,A. V. Korulin,V. M. Zalyetin,Stephen J. Pearton,In Hwan Lee,Amir M. Dabiran,Peter Chow +14 more
TL;DR: In this paper, the Schottky diode was fabricated on 3-μm-thick unintentionally doped n-GaN films grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) and on 12μmthick undoped nGaN layers prepared by epitaxial lateral overgrowth (ELOG).
Journal ArticleDOI
Neutron transmutation doping effects in GaN
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,N. G. Kolin,D. I. Merkurisov,V. M. Boiko,A. V. Korulin,Stephen J. Pearton +7 more
TL;DR: In this article, the effects of neutron transmutation doping were studied for undoped (residual donor concentrations <1015 cm−3) GaN films grown by metalorganic chemical vapor deposition.
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10 MeV electrons irradiation effects in variously doped n-GaN
A. Y. Polyakov,In Hwan Lee,N. B. Smirnov,A. V. Govorkov,E. A. Kozhukhova,N. G. Kolin,A. V. Korulin,V. M. Boiko,Stephen J. Pearton +8 more
TL;DR: In this article, the authors studied 10 MeV electron irradiation effects in a group of n-GaN films grown by standard metalorganic chemical vapor deposition (MOCVD) and by epitaxial lateral overgrowth (ELOG) techniques.
Journal ArticleDOI
Deep electron and hole traps in neutron transmutation doped n-GaN
In Hwan Lee,A. Y. Polyakov,N. B. Smirnov,A. V. Govorkov,E. A. Kozhukhova,N. G. Kolin,V. M. Boiko,A. V. Korulin,Stephen J. Pearton +8 more
TL;DR: In this article, the electrical properties of doped n-GaN were investigated and electron traps at 0.45 or 0.2 eV were found to be dominant not by shallow Ge donors produced by interaction of thermal neutrons with Ga, but by electron traps with different radiation defects.