E
E. A. Kozhukhova
Publications - 31
Citations - 684
E. A. Kozhukhova is an academic researcher. The author has contributed to research in topics: Metalorganic vapour phase epitaxy & Fermi level. The author has an hindex of 14, co-authored 30 publications receiving 660 citations.
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Journal ArticleDOI
Electrical characteristics of Au and Ag Schottky contacts on n-ZnO
Alexander Y. Polyakov,N. B. Smirnov,E. A. Kozhukhova,V. I. Vdovin,Kelly P. Ip,Young-Woo Heo,David P. Norton,Stephen J. Pearton +7 more
TL;DR: Au and Ag Schottky contacts on the epiready (0001)Zn surface of bulk n-ZnO crystals show Schotty barrier heights of 0.65-0.70 eV from capacitance-voltage measurements, activation energies for reverse saturation currents of 0 3 −0.4 eV and saturation current densities ranging from 10−5 A cm−2 on surfaces etched in HCl to 8×10−7 A¾2 on solvent cleaned samples.
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Proton implantation effects on electrical and recombination properties of undoped ZnO
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,E. A. Kozhukhova,V. I. Vdovin,Kelly P. Ip,M. E. Overberg,Young-Woo Heo,David P. Norton,Stephen J. Pearton,J. M. Zavada,V. A. Dravin +11 more
TL;DR: In this paper, electrical and optical properties of undoped n-ZnO crystals implanted with 50 keV protons with doses from 5×1013 to 5× 1015 cm−2 are reported.
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Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth
TL;DR: In this paper, optical deep level spectroscopy (ODLTS) and microcathodoluminescence (MCL) spectra were measured for a large group of n-GaN samples grown via metalorganic chemical vapor deposition (MOCVD), epitaxial lateral overgrowth (ELOG), or hydride vapor phase epitaxy (HVPE).
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Electrical properties of undoped bulk ZnO substrates
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,E. A. Kozhukhova,Stephen J. Pearton,David P. Norton,Andrei Osinsky,Amir M. Dabiran +7 more
TL;DR: In this article, Tokyo Denpa ZnO has been used to detect 0.3-eV electron traps, on the order of 2×1015 cm−3, which dominate the high-temperature capacitance-frequency characteristics.
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Alpha particle detection with GaN Schottky diodes
Alexander Y. Polyakov,N. B. Smirnov,A. V. Govorkov,A. V. Markov,E. A. Kozhukhova,I. M. Gazizov,N. G. Kolin,D. I. Merkurisov,V. M. Boiko,A. V. Korulin,V. M. Zalyetin,Stephen J. Pearton,In Hwan Lee,Amir M. Dabiran,Peter Chow +14 more
TL;DR: In this paper, the Schottky diode was fabricated on 3-μm-thick unintentionally doped n-GaN films grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) and on 12μmthick undoped nGaN layers prepared by epitaxial lateral overgrowth (ELOG).