Journal ArticleDOI
High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method
Jason Ronald Jenny,St. G. Müller,Adrian Powell,V. F. Tsvetkov,Hudson Mcdonald Hobgood,R.C. Glass,C. H. Carter +6 more
TLDR
In this paper, the growth of high-purity, semi-insulating (HPSI) 4H-SiC crystals has been achieved using the seeded-sublimation growth technique.Abstract:
The growth of high-purity, semi-insulating (HPSI) 4H-SiC crystals has been achieved using the seeded-sublimation growth technique. These semi-insulating (SI) crystals (2-inch diameter) were produced without the intentional introduction of elemental deep-level dopants, such as vanadium, and wafers cut from these crystals possess room-temperature resistivities greater than 109 Ωcm. Based upon temperature-dependent resistivity measurements, the SI behavior is characterized by several activation energies ranging from 0.9-1.5 eV. Secondary ion mass spectroscopy (SIMS) and electron paramagnetic resonance (EPR) data suggest that the SI behavior originates from deep levels associated with intrinsic point defects. Typical micropipe densities for wafers were between 30 cm-2 and 150 cm-2. The room-temperature thermal conductivity of this material is near the theoretical maximum of 5 W/mK for 4H-SiC, making these wafers suitable for high-power microwave applications.read more
Citations
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Journal ArticleDOI
Material science and device physics in SiC technology for high-voltage power devices
TL;DR: In this article, the features and present status of SiC power devices are briefly described, and several important aspects of the material science and device physics of the SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed.
Journal ArticleDOI
Advances in Silicon Carbide Electronics
J. C. Zolper,Marek Skowronski +1 more
TL;DR: The progress accomplished over the last eight years in SiC-based electronic materials is summarized in this issue of MRS Bulletin this paper, with a discussion of the most important materials issues such as compensation mechanisms in high-purity crystals, dislocation properties, and formation of SiC/SiO2 interfaces.
Journal ArticleDOI
Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
Stephan G. Müller,M.F. Brady,William H Brixius,R.C. Glass,H. McD. Hobgood,Jason Ronald Jenny,R.T. Leonard,D.P. Malta,Adrian Powell,Valeri F. Tsvetkov,S.T. Allen,John W. Palmour,Calvin H. Carter +12 more
TL;DR: In this paper, the authors show the progression in the development of semi-insula ti g SiC grown by the sublimation technique from extrinsically doped material to high purity semi-insulating (HPSI) 4H-SiC bulk crystals of 2-inch and 3-inch diameter without re sorting to the intentional introduction of elemental deep level dopants such as vanadium.
Journal ArticleDOI
Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiC
TL;DR: In this paper, the authors used electron paramagnetic resonance (EPR) and infrared photoluminescence (IR-PL) to study semi-insulating (SI) 4H SiC grown by physical vapor transport (PVT) and by high-temperature chemical vapor deposition (HTCVD).
Journal ArticleDOI
Simulation and Optimization of Gate Temperatures in GaN-on-SiC Monolithic Microwave Integrated Circuits
M. Garven,Jeffrey P. Calame +1 more
TL;DR: In this article, the authors present 3D thermal simulation studies of GaN-on-SiC monolithic microwave integrated circuits (MMICs) containing multifinger micrometer-scale high electron mobility transistors (HEMTs).
References
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Book ChapterDOI
The Electrical and Photoelectronic Properties of Semi-Insulating GaAs
TL;DR: In this article, the authors discuss the electrical and pholectric properties of semi-insulating gallium arsenide (GaAs) and the techniques required to measure these properties without a proper understanding of the techniques, it is impossible to critically evaluate the derived results.
Journal ArticleDOI
The status of SiC bulk growth from an industrial point of view
St. G. Müller,R.C. Glass,H.M. Hobgood,Valeri F. Tsvetkov,M.F. Brady,D. Henshall,J.R Jenny,D. Malta,C.H. Carter +8 more
TL;DR: In this article, the current status of SiC bulk sublimation growth for the industrial production of 50mm diameter 4H and 6H wafers and the quality improvement of 75mm wafer was reviewed.