Branson D. Belle

TL;DR: A bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness is reported, which has potential for high-frequency operation and large-scale integration.

TL;DR: Transition metal dichalcogenides sandwiched between two layers of graphene produce an enhanced photoresponse, which allows development of extremely efficient flexible photovoltaic devices with photoresponsivity above 0.1 ampere per watt (corresponding to an external quantum efficiency of above 30%).

TL;DR: A new generation of field-effect vertical tunnelling transistors where two-dimensional tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or chemical vapour deposition-grown graphene are described.

TL;DR: The identification of single- and few- layer boron nitride is described, its optical contrast is much smaller than that of graphene but even monolayers are discernable by optimizing viewing conditions.

TL;DR: The results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field and offers great potential for applications in tunnel devices and in field-effect transistors with ahigh carrier density in the conducting channel.