A
Arun Kumar
Researcher at Indian Institute of Technology Patna
Publications - 31
Citations - 200
Arun Kumar is an academic researcher from Indian Institute of Technology Patna. The author has contributed to research in topics: MOSFET & Subthreshold conduction. The author has an hindex of 7, co-authored 25 publications receiving 144 citations. Previous affiliations of Arun Kumar include University of Tokyo.
Papers
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Journal ArticleDOI
A Threshold Voltage Model of Silicon-Nanotube-Based Ultrathin Double Gate-All-Around (DGAA) MOSFETs Incorporating Quantum Confinement Effects
TL;DR: In this article, a quantum-mechanical threshold voltage model for ultrathin double gate-all-around DGAA MOSFETs has been developed by solving three-dimensional (3D) Poisson's and 2-D Schrodinger's equations in the channel region.
Proceedings ArticleDOI
Analysis and prospect of local variability of drain current in scaled MOSFETs by a new decomposition method
Takaaki Tsunomura,Arun Kumar,Tomoko Mizutani,Chengkuo Lee,Akio Nishida,Kiyoshi Takeuchi,S. Inaba,Shiro Kamohara,Kazuo Terada,Toshiro Hiramoto,Tohru Mogami +10 more
TL;DR: In this article, the causes of drain current local variability are analyzed by decomposing into current variability components, including V TH and G m components, and it is found that effects of current onset variability caused by channel potential fluctuations largely contribute to the current variability.
Proceedings ArticleDOI
Suppression of DIBL and current-onset voltage variability in intrinsic channel fully depleted SOI MOSFETs
Toshiro Hiramoto,Tomoko Mizutani,Arun Kumar,Akio Nishida,Takaaki Tsunomura,S. Inaba,K. Takeuchi,Shiro Kamohara,Tohru Mogami +8 more
TL;DR: In this article, the intrinsic channel SOI MOSFETs were fabricated and their variability were compared with conventional bulk MOSFs, and it was found that, besides V TH variability, both DIBL variabitlity and current-onset voltage variability are well suppressed in the intrinsic channels thanks to non-intentionally doped channel.
Journal ArticleDOI
Analytical modeling of subthreshold characteristics of ultra-thin double gate-all-around (DGAA) MOSFETs incorporating quantum confinement effects
TL;DR: In this article, an analytical model of sub-threshold current and subthreshold swing of short channel ultra-thin double gate-all-around (DGAA) MOSFETs including quantum confinement effects have been proposed.
Journal ArticleDOI
An Insight Into Self-Heating Effects and Its Implications on Hot Carrier Degradation for Silicon-Nanotube-Based Double Gate-All-Around (DGAA) MOSFETs
TL;DR: In this article, 3-dimensional (3-D) electrothermal simulations using coupled hydrodynamic and thermodynamic transport models are performed to analyze the electrothermodynamic behavior and self-heating effects in ultra-thin DGAA MOSFETs.