Proceedings ArticleDOI
Analysis and prospect of local variability of drain current in scaled MOSFETs by a new decomposition method
Takaaki Tsunomura,Arun Kumar,Tomoko Mizutani,Chengkuo Lee,Akio Nishida,Kiyoshi Takeuchi,S. Inaba,Shiro Kamohara,Kazuo Terada,Toshiro Hiramoto,Tohru Mogami +10 more
- pp 97-98
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TLDR
In this article, the causes of drain current local variability are analyzed by decomposing into current variability components, including V TH and G m components, and it is found that effects of current onset variability caused by channel potential fluctuations largely contribute to the current variability.Abstract:
Causes of drain current local variability are analyzed by decomposing into current variability components. Besides V TH and G m components, it is newly found that effects of “current onset” variability caused by channel potential fluctuations largely contribute to the current variability and that G m component is relatively small in the saturation region. It is shown that both V TH and current onset components decreases with reducing channel dopants, indicating that intrinsic channel is very effective to reduce current variability.read more
Citations
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Journal ArticleDOI
Statistical Variability in Fully Depleted SOI MOSFETs Due to Random Dopant Fluctuations in the Source and Drain Extensions
TL;DR: In this paper, the authors show that the standard deviation of the threshold voltage cannot be adequately used as a sole metric of device variability in such transistors, due to a sharp departure from normality of the voltage distribution, and an enhanced influence of the source/drain-dopant fluctuations on the on-current and short-channel effects of the fully depleted thin-body silicon-on-insulator transistors.
Journal ArticleDOI
Experimental Demonstration of Ultrashort-Channel (3 nm) Junctionless FETs Utilizing Atomically Sharp V-Grooves on SOI
TL;DR: In this article, anisotropic wet etching was used to create atomically sharp V-shaped grooves for junctionless FETs, where the channel length, defined as the width of the V-groove bottom, was as short as 3 nm and the channel thickness was between 1 and 8 nm.
Journal ArticleDOI
Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm
Takashi Matsukawa,Yongxun Liu,Shin-ichi O'uchi,Kazuhiko Endo,Junichi Tsukada,Hiromi Yamauchi,Yuki Ishikawa,Hiroyuki Ota,Shinji Migita,Yukinori Morita,Wataru Mizubayashi,Kunihiro Sakamoto,M. Masahara +12 more
TL;DR: In this article, a measurement-based analysis of ON-current variability for fin-shaped FETs (FinFETs) was performed by measuring the threshold voltage, transconductance Gm, and parasitic resistance.
Proceedings ArticleDOI
Measuring threshold voltage variability of 10G transistors
TL;DR: In this article, the authors measured the threshold voltage variability of 10G transistors using a special device-matrix array test element group (DMA TEG) exclusively for ultra-fast V TH measurements.
Proceedings ArticleDOI
Suppression of DIBL and current-onset voltage variability in intrinsic channel fully depleted SOI MOSFETs
Toshiro Hiramoto,Tomoko Mizutani,Arun Kumar,Akio Nishida,Takaaki Tsunomura,S. Inaba,K. Takeuchi,Shiro Kamohara,Tohru Mogami +8 more
TL;DR: In this article, the intrinsic channel SOI MOSFETs were fabricated and their variability were compared with conventional bulk MOSFs, and it was found that, besides V TH variability, both DIBL variabitlity and current-onset voltage variability are well suppressed in the intrinsic channels thanks to non-intentionally doped channel.
References
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Journal ArticleDOI
Current mismatch due to local dopant fluctuations in MOSFET channel
TL;DR: In this paper, the impact of local dopant fluctuation on the intrinsic mismatch of long-channel MOSFETs is analyzed and a closed analytical formula for current mismatch is derived to show a nonscaled and self-consistent form /spl sim/[4+log(L/L/sub min/)]/WL.