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Bin Tian
Researcher at Ghent University
Publications - 19
Citations - 749
Bin Tian is an academic researcher from Ghent University. The author has contributed to research in topics: Silicon & Silicon photonics. The author has an hindex of 8, co-authored 19 publications receiving 626 citations.
Papers
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Journal ArticleDOI
Room-temperature InP distributed feedback laser array directly grown on silicon
Zhechao Wang,Bin Tian,Marianna Pantouvaki,W Guo,Philippe Absil,Joris Van Campenhout,Clement Merckling,Dries Van Thourhout +7 more
TL;DR: In this article, an optically pumped InP-based distributed feedback laser array was demonstrated for wavelength division multiplexing applications on (001)-silicon operating at room temperature.
Journal ArticleDOI
Novel Light Source Integration Approaches for Silicon Photonics
Zhechao Wang,Amin Abbasi,Utsav D. Dave,Andreas De Groote,Sulakshna Kumari,Bernadette Kunert,Clement Merckling,Marianna Pantouvaki,Yuting Shi,Bin Tian,Kasper Van Gasse,Jochem Verbist,Ruijun Wang,Weiqiang Xie,Jing Zhang,Yunpeng Zhu,Johan Bauwelinck,Xin Yin,Zeger Hens,Joris Van Campenhout,Bart Kuyken,Roel Baets,Geert Morthier,Dries Van Thourhout,Gunther Roelkens +24 more
TL;DR: In this paper, the most recent progress in this field is reviewed, covering the integration approaches of III-V-to-silicon bonding, transfer printing, epitaxial growth and the use of colloidal quantum dots.
Journal ArticleDOI
III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate
Bernardette Kunert,W Guo,Yves Mols,Bin Tian,Zhechao Wang,Yuting Shi,D. Van Thourhout,Marianna Pantouvaki,J. Van Campenhout,Robert Langer,Kathy Barla +10 more
TL;DR: In this article, an integration approach of III/V nano ridges on patterned silicon wafers by metal organic vapor phase epitaxy (MOVPE) was presented.
Journal ArticleDOI
Polytypic InP Nanolaser Monolithically Integrated on (001) Silicon
Zhechao Wang,Bin Tian,Mohanchand Paladugu,Marianna Pantouvaki,Nicolas Le Thomas,Clement Merckling,W Guo,Johan Dekoster,Joris Van Campenhout,Philippe Absil,Dries Van Thourhout +10 more
TL;DR: A silicon-integrated InP nanolaser that operates at room temperature with a low threshold of 1.69 pJ and a large spontaneous emission factor of 0.04 is demonstrated.
Journal ArticleDOI
Room Temperature O-band DFB Laser Array Directly Grown on (001) Silicon.
Bin Tian,Zhechao Wang,Zhechao Wang,Marianna Pantouvaki,Philippe Absil,Joris Van Campenhout,Clement Merckling,Dries Van Thourhout +7 more
TL;DR: In this paper, high quality InGaAs layers are grown on standard 001-silicon substrates using a selective growth process compatible with integration, and a distributed feedback laser operation at a single wavelength with strong suppression of side modes was demonstrated.