Bingyan Chen

TL;DR: Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV.

TL;DR: In this article, the Pd/graphene contact resistance at room temperature is reduced below the 100 Ω·μm level both on mechanically exfoliated and chemical-vapordeposition graphene by adopting high-purity palladium and high-quality graphene and controlling the fabrication process to not contaminate the interface.

TL;DR: This work discovers that the dynamic formation of GBs within chemical vapor deposited polygonal graphene flakes is described by a geometric rule, and shows the growth control over the length of straight graphene GB lines and the capability of parallel fabrication of field-effect transistor devices across predicted GBs in a straightforward manner.

TL;DR: In this article, a nano-meter-scaled 1T-1R nonvolatile memory (NVM) architecture comprising of RRAM cells built on vertical GAA nano-pillar transistors, either junction-less or junction-based, is systematically investigated.

TL;DR: In this paper, a large scale growth of monolayer graphene on Pt foil, modified bubbling transfer and photolithography-based device fabrication is described, and as-fabricated graphene Hall elements through this process exhibit high current sensitivity typically up to 1200 V/AT.