Byung-Hyun Lee

TL;DR: iCVD polymer-intercalated RRAM (i-RRAM) is demonstrated, which is the first experimental presentation of water-resistant organic memory without any waterproof protection package and the direct observation of a carbon filament is reported for the first time using transmission electron microscopy, putting an end to the controversy surrounding the switching mechanism.

TL;DR: In this paper, the gate-induced drain leakage (GIDL) current of vertically stacked nanowire (VS-NW) FETs was analyzed, and two different operational modes of the VS-NW, an inversion mode (IM) and a junctionless mode (JM), were compared.

TL;DR: The proposed VJ-FET mitigates the issues of variability and fabrication complexity that are encountered in the vertically integrated multi-NW FET based on an identical structure and the endurance and retention characteristics are improved due to the above-mentioned bulk conduction.

TL;DR: This research suggests an ultimate design for the end-of-the-roadmap devices to overcome the limits of scaling and is revamped to create nonvolatile memory with the adoption of a charge trapping layer for enhanced practicality.

TL;DR: Dual error detection scheme is proposed to guarantee the reliability of signals, and gain enhanced buffer and PVT tolerant data fetch scheme are adopted for CA and DQ respectively to reduce the output jitter.