C. Fernando

TL;DR: In this paper, the authors present a single-chip fully compliant Bluetooth radio fabricated in a digital 130-nm CMOS process, which is compatible with digital deep-submicron CMOS processes and can be readily integrated with a digital baseband and application processor.

TL;DR: The receiver in the first single-chip GSM/GPRS transceiver that incorporates full integration of quad-band receiver, transmitter, memory, power management, dedicated ARM processor and RF built-in self test in a 90-nm digital CMOS process is presented.

TL;DR: In this paper, the authors present a single-chip fully compliant Bluetooth radio fabricated in a digital 130-nm CMOS process, which is compatible with digital deep-submicron CMOS processes and can be readily integrated with a digital baseband and application processor.

TL;DR: A novel simulation technique which uses an event-driven VHDL simulator to model phase noise behavior of an RF oscillator for wireless applications is proposed and demonstrated and has been successfully applied and validated in a Bluetooth transceiver IC fabricated in a digital 130 nm process.

TL;DR: In this article, an RF receiver front-end for a GSM/GPRS radio system-on-chip in a 90nm digital CMOS technology is presented, consisting of low noise amplifier, transconductance amplifier, switching mixer and local oscillator.