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Carl-Mikael Zetterling
Researcher at Royal Institute of Technology
Publications - 226
Citations - 3672
Carl-Mikael Zetterling is an academic researcher from Royal Institute of Technology. The author has contributed to research in topics: Silicon carbide & Bipolar junction transistor. The author has an hindex of 30, co-authored 226 publications receiving 3313 citations. Previous affiliations of Carl-Mikael Zetterling include Stanford University & Jean Monnet University.
Papers
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MonographDOI
Process technology for silicon carbide devices
TL;DR: Zetterling, S.M.Ostling and S.J.Pearton as mentioned in this paper, S.Sveinbjornsson, S.-K.Lee, and M.
Proceedings ArticleDOI
SiC power devices — Present status, applications and future perspective
TL;DR: In this paper, the authors present a short review of the current state of the art in active switching device performance for both SiC and GaN, and present the SiC wafer roadmap looks very favorable as volume production takes off.
Journal ArticleDOI
Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries
J. J. Wang,Eric Lambers,S. J. Pearton,Mikael Östling,Carl-Mikael Zetterling,J. M. Grow,Fan Ren,Randy J. Shul +7 more
TL;DR: A parametric study of the etching characteristics of 6H p+ and n+ SiC and thin-film SiC 0.5N0.5 in inductively coupled plasma (ICP) NF3/O2 and NF3 /Ar discharges has been performed as mentioned in this paper, where the etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power.
Journal ArticleDOI
500 $^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC
TL;DR: In this article, the performance of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter coupled logic is reported from -40 °C to 500 °C.
Journal ArticleDOI
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
S.-K. Lee,Carl-Mikael Zetterling,Mikael Östling,Ingvar Åberg,Martin Magnusson,Knut Deppert,Lars-Erik Wernersson,Lars Samuelson,A Litwin +8 more
TL;DR: In this paper, the size-selected Au nano-particles in Schottky contacts on silicon carbide were used to reduce the barrier height of the contacts, and the reduction was shown for both n- and p-type Schittky contacts using current-voltage and capacitance voltage measurements.