500 $^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC
TLDR
In this article, the performance of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter coupled logic is reported from -40 °C to 500 °C.Abstract:
Successful operation of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter coupled logic is reported from -40 °C to 500 °C. Nonmonotonous temperature dependence (previously predicted by simulations but now measured) was observed for the transistor current gain; in the range -40 °C-300 °C it decreased when the temperature increased, while it increased in the range 300 °C-500 °C. Stable noise margins of ~ 1 V were measured for a 2-input OR/NOR gate operated on -15 V supply voltage from 0 °C to 500 °C for both OR and NOR output.read more
Citations
More filters
Journal ArticleDOI
Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C
TL;DR: In this paper, short-term demonstrations of packaged 4H-SiC junction field effect transistor (JFET) logic integrated circuits (ICs) at temperatures exceeding 800 °C in air are reported, including a 26-transistor 11-stage ring oscillator that functioned at 961 °C ambient temperature.
Journal ArticleDOI
A Monolithic, 500 degrees C Operational Amplifier in 4H-SiC Bipolar Technology
Raheleh Hedayati,Luigia Lanni,Saul Rodriguez,Bengt Gunnar Malm,Ana Rusu,Carl-Mikael Zetterling +5 more
TL;DR: In this article, a monolithic bipolar operational amplifier (opamp) fabricated in 4H-SiC technology is presented, which is used in an inverting negative feedback amplifier configuration.
Journal ArticleDOI
Assessment of 10 kV, 100 A Silicon Carbide mosfet Power Modules
TL;DR: In this paper, the SiC mosfet power module exhibits an on-state resistance of 40 mΩ at room-temperature and leakage current in the range of 100 nA, approximately one order of magnitude lower than that of a 6.5 kV Si-IGBT.
Journal ArticleDOI
SiC Integrated Circuit Control Electronics for High-Temperature Operation
Mihaela Alexandru,Viorel Banu,X. Jorda,Josep Montserrat,Miquel Vellvehi,Dominique Tournier,José Millan,Philippe Godignon +7 more
TL;DR: A prototype set of essential mixed-signal ICs on SiC capable of controlling power switches and a lateral power MESFET able to operate at high temperatures, all embedded on the same chip.
Journal ArticleDOI
Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect
TL;DR: In this paper, fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 h of stable electrical operation at 500 °C in air ambient.
References
More filters
Journal ArticleDOI
High-temperature electronics - a role for wide bandgap semiconductors?
TL;DR: It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range.
MonographDOI
Process technology for silicon carbide devices
TL;DR: Zetterling, S.M.Ostling and S.J.Pearton as mentioned in this paper, S.Sveinbjornsson, S.-K.Lee, and M.
Journal ArticleDOI
Digital CMOS IC's in 6H-SiC operating on a 5-V power supply
TL;DR: In this article, an implanted p-well process was used to construct the first 6H-SiC CMOS circuit with a 5V power supply for temperatures ranging from room temperature up to 300/spl deg/C.
Journal ArticleDOI
Surface-Passivation Effects on the Performance of 4H-SiC BJTs
Reza Ghandi,Benedetto Buono,Martin Domeij,Romain Esteve,Adolf Schöner,Jisheng Han,Sima Dimitrijev,Sergey A. Reshanov,C.-M. Zetterling,Mikael Östling +9 more
TL;DR: In this article, the performance of bipolar junction transistor (BJT) is compared experimentally and by device simulation for 4H-SiC BJTs passivated with different surface passivation layers.
Journal ArticleDOI
Bipolar Integrated Circuits in 4H-SiC
Shakti Singh,J.A. Cooper +1 more
TL;DR: In this article, the authors describe bipolar digital integrated circuits on semi-insulating 4H-SiC that operate over a wide range of supply voltage and temperature, demonstrating the potential of SiC for high-temperature small-scale integrated-circuit applications.