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Carl-Mikael Zetterling
Researcher at Royal Institute of Technology
Publications - 226
Citations - 3672
Carl-Mikael Zetterling is an academic researcher from Royal Institute of Technology. The author has contributed to research in topics: Silicon carbide & Bipolar junction transistor. The author has an hindex of 30, co-authored 226 publications receiving 3313 citations. Previous affiliations of Carl-Mikael Zetterling include Stanford University & Jean Monnet University.
Papers
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Journal ArticleDOI
CVD-based tungsten carbide Schottky contacts to 6H-SiC for very high-temperature operation
TL;DR: In this article, tungsten carbide, with its hardness, chemical inertness, thermal stability and low resistivity, is shown as a reliable contact material to n- and p-type 6H-SiC.
Journal ArticleDOI
Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C
TL;DR: In this article, a fully differential amplifier implemented in a low-voltage 4H-silicon carbide bipolar junction transistor technology has been designed, considering the variation of device parameters over a large temperature range.
Proceedings ArticleDOI
A monolithic SiC drive circuit for SiC Power BJTs
TL;DR: In this article, a SiC drive integrated circuit (IC) designed for driving SiC power BJTs is presented, which has been tested in different loading conditions (resistive and capacitive), at switching frequencies up to 500kHz and together with a commercial power BJT.
Journal ArticleDOI
The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions
Erik Danielsson,Carl-Mikael Zetterling,Mikael Östling,Kevin J. Linthicum,Darren B. Thomson,Okhyun Nam,Robert F. Davis +6 more
TL;DR: In this paper, the authors compared and characterized GaN/SiC heterojunction diodes with MBE, metal organic chemical vapor deposition, and hydride vapor phase epitaxy.
Journal ArticleDOI
550 °C 4H-SiC p-i-n Photodiode Array With Two-Layer Metallization
TL;DR: The p-i-n ultraviolet (UV) photodiodes based on 4H-SiC have been fabricated and characterized from room temperature (RT) to 550 °C as mentioned in this paper.