Cheon-Seok Park

TL;DR: Based on power bandwidth analysis, optimum susceptance provided by the multiple resonance circuit at the peaking amplifier, was obtained and the proposed broadband DPA was designed using 45 W gallium–nitride high electron mobility transistor for both carrier and peaking amplifiers.

TL;DR: In this article, the authors presented a design method for a compact inverted Doherty power amplifier (IDPA), which has high-efficiency and high-power characteristics, by dynamically modulating the load impedance according to the input power drive.

TL;DR: In this paper, the ion-implanted cadmium sulphide (CdS) thin films were analyzed using x-ray diffraction, optical transmittance spectra and Raman scattering.

TL;DR: This brief presents asymmetric load matching networks for broadband Doherty power amplifiers (DPAs) using balanced open stubs using two-section matching networks to provide a proper load modulation with the proposed output combiner.

TL;DR: A CMOS power amplifier integrated circuit with an optimized dual-mode supply modulator, based on a hybrid buck converter consisting of a wideband linear amplifier and a highly efficient switching amplifier, provides two operation modes: envelope tracking for high average output power and average power tracking (APT) for low output power.