C
Chunlai Xue
Researcher at Chinese Academy of Sciences
Publications - 149
Citations - 2620
Chunlai Xue is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Responsivity & Photodetector. The author has an hindex of 23, co-authored 146 publications receiving 1999 citations.
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Journal ArticleDOI
GeSn p-i-n photodetector for all telecommunication bands detection
Shaojian Su,Buwen Cheng,Chunlai Xue,Wei Wang,Quan Cao,Haiyun Xue,Weixuan Hu,Guangze Zhang,Yuhua Zuo,Qiming Wang +9 more
TL;DR: Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated and are attractive for applications in both optical communications and optical interconnects.
Journal ArticleDOI
Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band
TL;DR: A heterojunction photodetector made from germanium and perovskite layers can detect light in the visible and near-infrared ranges, showing potential for use in a wide range of applications, including in optical communications and next-generation optoelectronics.
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Plasma Treatment for Nitrogen-Doped 3D Graphene Framework by a Conductive Matrix with Sulfur for High-Performance Li-S Batteries.
TL;DR: The N-doped graphene shows high Electrochemical performance and the flexible 3D porous stable structure accommodates the considerable volume change of the active material during lithium insertion and extraction processes, improving the long-term electrochemical performance.
Journal ArticleDOI
High-responsivity GeSn short-wave infrared p-i-n photodetectors
Dongliang Zhang,Chunlai Xue,Buwen Cheng,Shaojian Su,Zhi Liu,Xu Zhang,Guangze Zhang,Chuanbo Li,Qiming Wang +8 more
TL;DR: In this article, surface-illuminated GeSn p-i-n photodetectors with Ge0.964Sn0.036 active layer on Ge substrate were fabricated.
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Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation
Xiao Gong,Genquan Han,Fan Bai,Shaojian Su,Pengfei Guo,Yue Yang,Ran Cheng,Dongliang Zhang,Guangze Zhang,Chunlai Xue,Buwen Cheng,Jisheng Pan,Zheng Zhang,Eng Soon Tok,D.A. Antoniadis,Yee-Chia Yeo +15 more
TL;DR: In this paper, the dependence of carrier mobility and drive current IDsat of Ge0.958Sn0.042 p-channel field effect transistors (pMOSFETs) on surface orientations was investigated.