THE DESIGN AND ANALYSIS OF EXPERIMENTS. By Oscar Kempthorne. New York, John Wiley and Sons, Inc., 1952. 631 pp. $8.50. This book by a teacher of statistics (as well as a consultant for \"experimenters\") is a comprehensive study of the philosophical background for the statistical design of experiment. It is necessary to have some facility with algebraic notation and manipulation to be able to use the volume intelligently. The problems are presented from the theoretical point of view, without such practical examples as would be helpful for those not acquainted with mathematics. The mathematical justification for the techniques is given. As a somewhat advanced treatment of the design and analysis of experiments, this volume will be interesting and helpful for many who approach statistics theoretically as well as practically. With emphasis on the \"why,\" and with description given broadly, the author relates the subject matter to the general theory of statistics and to the general problem of experimental inference. MARGARET J. ROBERTSON

The Design and Analysis of Experiments

Neuromorphic computing has come to refer to a variety of brain-inspired computers, devices, and models that contrast the pervasive von Neumann computer architecture This biologically inspired approach has created highly connected synthetic neurons and synapses that can be used to model neuroscience theories as well as solve challenging machine learning problems The promise of the technology is to create a brain-like ability to learn and adapt, but the technical challenges are significant, starting with an accurate neuroscience model of how the brain works, to finding materials and engineering breakthroughs to build devices to support these models, to creating a programming framework so the systems can learn, to creating applications with brain-like capabilities In this work, we provide a comprehensive survey of the research and motivations for neuromorphic computing over its history We begin with a 35-year review of the motivations and drivers of neuromorphic computing, then look at the major research areas of the field, which we define as neuro-inspired models, algorithms and learning approaches, hardware and devices, supporting systems, and finally applications We conclude with a broad discussion on the major research topics that need to be addressed in the coming years to see the promise of neuromorphic computing fulfilled The goals of this work are to provide an exhaustive review of the research conducted in neuromorphic computing since the inception of the term, and to motivate further work by illuminating gaps in the field where new research is needed

A Survey of Neuromorphic Computing and Neural Networks in Hardware.

Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.

Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication

Asynchronous Circuit Design

Defect-free germanium has been demonstrated in SiO2 trenches on silicon via Aspect Ratio Trapping, whereby defects arising from lattice mismatch are trapped by laterally confining sidewalls. Results were achieved through a combination of conventional photolithography, reactive ion etching of SiO2, and selective growth of Ge as thin as 450nm. Full trapping of dislocations originating at the Ge∕Si interface has been demonstrated for trenches up to 400nm wide without the additional formation of defects at the sidewalls. This approach shows great promise for the integration of Ge and/or III-V materials, sufficiently large for key device applications, onto silicon substrates.

Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping

: This paper presents for the first time photo-assisted Metalorganic vapor phase epitaxial (MOVPE) growth of ZnMgS on Si (100) substrates. The growth was done using dimethylzinc (DMZn), bismethylcyclo-pentadienyl-magnesium ((MeCP)2Mg), and diethylsulfhide (DES) as zinc, magnesium, and sulfur precursors. Epitaxial characterization by X-ray Photoelectron Spectroscopy (XPS), and low - angle X-ray Diffraction (XRD) results are presented. Mg solid phase incorporation is estimated to vary from 0 to 60 percent. The epitaxial nature of the ZnMgS layers has been verified using the low-angle X-ray diffraction eliminating any interference from the Si substrate. It can be shown with this technique that the change in the ZnMgS peak position changes from 27.35 degrees to 26.5 degrees with an increase in Mg incorporation, compared with a Si control sample peak at 27.4 degrees. XRD results obtained have been verified with XPS data. Chlorine doping of the ZnMgS layer was also studied. Concentrations up to 3 x 10(exp 13)/cu cm were observed in the ZnMgS layer. Results of the n (ZnMgS:Cl) - p (Si) diodes fabricated are also presented.

Photo-Assisted MOVPE Growth of ZnMgS on (100) Si

We compare two 16 bit adders based on the Manchester Carry Chain (MCC) circuit topology using the TSMC .25 µm process technology. The first circuit is a synchronous 16 bit adder based on an optimized 4-bit MCC where the carry out of each of the 4-bit MCCs are ripple carried into the next MCC block through an edge sensitive D-Flip Flop. The second circuit is an asynchronous adder, which uses the same optimized four-bit MCC structure as our synchronous design, except the carry out signals are now controlled asynchronously with request acknowledge signals generated with Muller-C elements. The asynchronous design has less average delay and uses less power than the synchronous design at the expense of increased area, and longer design time. We also compare our asynchronous adder design to other 32 bit asynchronous designs by measuring the propagation delay though 5 carries (the average carry length of a 32 bit adder). In order to compare designs that have been designed with different technologies, we attempt to scale the area, delay, and power by using lambda rules and ring oscillator delay and power results available on the MOSIS website. Results show that the MCC based asynchronous adder is approximately two times faster than other adders with approximately the same power dissipation.

Comparison of an Asynchronous Manchester Carry Chain Adder to a Synchronous Manchester Carry Chain Adder

A laboratory based course for Electrical Engineering Masters students that teaches students how to design a process flow for metal oxide semiconductor field effect transistors (MOSFETs) that are optimized a high DC gain is presented. This course was developed, because while much of analog circuit design has to use processes that are optimized for high speed digital operation, there still exists design space for transistors that are optimized for analog operation in the low frequency domain. An example of this design space would be circuits that interface with neurons.

A Course for Designing Transistors for High Gain Analog Applications

John Lee, San Jose State University JOHN LEE is an Assistant Professor in the Department of Mechanical and Aerospace Engineering at San Jose State University. He teaches in the areas of microelectromechanical systems (MEMS), manufacturing processes, mechanical design, and dynamics. He conducts research in microfluidics and micromechanics applied to MEMS design and fabrication. Contact: sjlee@sjsu.edu.

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A Development Framework for Hands-On Laboratory Modules in Microelectromechanical Systems (MEMS)

We have conducted a study of the compositional control of epitaxial ZnSySe1-y grown by photoassisted metal organic vapor phase epitaxy (MOVPE) (250 torr, 340°C, UV=14 mW/cm2) on GaAs (100) substrates. We have achieved lattice matched ZnSSe films on GaAs substrates using photoassisted growth using dimethylzinc (DMZn), dimethylselenide (DMSe), and tertiary-butylmercaptan (t-BuSH) as precursors. In addition, we have obtained sulfur compositions (y), ranging from 0.023 to unity (ZnS). The growth rate of the ZnS was 1 µm/h, which was previously unattainable by our group using diethylsulfur. The closely lattice matched sample (y=0.07 as determined by high resolution x-ray diffraction) showed a near band edge peak intensity (NBE) to deep level emission intensity (DLE) ratio of 77 to 1, as determined by room temperature photoluminescence measurements. We have examined the sulfur incorporation as a function of source mole fractions, UV intensity, and growth temperature and found that optimized growth conditions (optimized for range of compositions possible, and NBE/DLE ratio) are XDMZn=1.5 × 10−4, XDMSe=3×10−4, UV=14 mW/cm2, growth temperature=340°C. XDMZn and XDMSe are the mole fractions of DMZn and DMSe, respectively. We have found the growth rate to be 1 µm/h for y=0.023 to 0.24 for these optimized conditions. It was found that to achieve sulfur compositions of less than 0.9, the t-BuSH mole fractions had to be kept low. Higher UV intensities increased the incorporation of selenium, while also lowering the material quality (NBE/DLE ratios). We have shown that the optical material qualities of ZnSSe films grown with t-BuSH are much better than ZnSSe films grown with DES.

David W Parent

Papers

Photo-Assisted MOVPE Growth of ZnMgS on (100) Si

Comparison of an Asynchronous Manchester Carry Chain Adder to a Synchronous Manchester Carry Chain Adder

A Course for Designing Transistors for High Gain Analog Applications

A Development Framework for Hands-On Laboratory Modules in Microelectromechanical Systems (MEMS)

The photoassisted MOVPE growth of ZnSSe using tertiary-butylmercaptan