M
M. Vanmackelberg
Researcher at Centre national de la recherche scientifique
Publications - 5
Citations - 213
M. Vanmackelberg is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: AND gate & MOSFET. The author has an hindex of 5, co-authored 5 publications receiving 210 citations.
Papers
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Journal ArticleDOI
What are the limiting parameters of deep-submicron MOSFETs for high frequency applications?
Gilles Dambrine,C. Raynaud,Dimitri Lederer,Morin Dehan,O. Rozeaux,M. Vanmackelberg,Francois Danneville,Sylvie Lepilliet,Jean-Pierre Raskin +8 more
TL;DR: In this paper, the degradation of the maximum oscillation frequency is mainly related to the increase of the parasitic feedback gate-to-drain capacitance and output conductance with the physical channel length reduction.
Journal ArticleDOI
Impact of downscaling on high-frequency noise performance of bulk and SOI MOSFETs
G. Pailloncy,C. Raynaud,M. Vanmackelberg,Francois Danneville,Sylvie Lepilliet,Jean-Pierre Raskin,Gilles Dambrine +6 more
TL;DR: In this article, the intrinsic Pucel's noise P, R, and C parameters are not strongly modified by the device scaling and the limitation of the noise performance versus the downscaling process is mainly related to the frequency performance (f/sub max/) of the device.
Journal ArticleDOI
0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters
M. Vanmackelberg,C. Raynaud,O. Faynot,J.L. Pelloie,Claude Tabone,A. Grouillet,François Martin,Gilles Dambrine,L. Picheta,E. Mackowiak,P. Llinares,J. Sevenhans,E. Compagne,G. Fletcher,Denis Flandre,Vincent Dessard,D. Vanhoenacker,J-P Raskin +17 more
TL;DR: In this paper, the authors describe low and high frequency performance including microwave noise parameters of 0.25 mum Fully depleted (FD) silicon-on-insulator (SOI) devices and compare the noise performance with 0.5 mum partially depleted (PD) devices.
Proceedings ArticleDOI
Transmission Lines on Low Resistivity Silicon Substrate for MMICs Applications
TL;DR: In this paper, transmission lines structures (Thin Film Microstrip -TFMS- and coplanar waveguide -CPW-) on low resistivity (? = 10?-cm) silicon substrate are investigated, for millimeter wave applications.
Proceedings ArticleDOI
Impact of down scaling on high frequency noise performance of bulk and SOI MOSFETs
Gilles Dambrine,C. Raynaud,M. Vanmackelberg,Francois Danneville,G. Pailloncy,Sylvie Lepilliet,Jean-Pierre Raskin +6 more
TL;DR: In this article, the performance of MOSFETs with the downscaling process of the channel gate length is analyzed experimentally and different contributions of the extrinsic and intrinsic parameters on these transit frequencies are detailed.