Dongxia Shi

TL;DR: The epitaxial growth of single-domain graphene on h-BN by a plasma-assisted deposition method and the synthesis method is potentially applicable on other flat surfaces could open new ways of graphene band engineering through epitaxy on different substrates.

TL;DR: This simple and controllable process of buckled graphene provides a feasible fabrication for graphene flexible electronic devices and strain sensors due to its novel mechanical and electrical properties.

TL;DR: A comprehensive review of various types of graphene-based strain sensors with different structures and mechanisms is given in this paper. But, the authors do not consider the use of a perfect Graphene, as perfect Gaspane is robust and has a low piezoresistive sensitivity.

TL;DR: The wafer-scale epitaxial growth of highly oriented continuous and uniform monolayer MoS2 films on single-crystalline sapphire wafers by chemical vapor deposition (CVD) method would facilitate the scalable fabrication of various electronic, valleytronic, and optoelectronic devices for practical applications.

TL;DR: An integrated, highly sensitive humidity sensors array based on large-area, uniform single-layer molybdenum disulfide with an ultraclean surface that shows stable performance, suggesting great potential in future noncontact interface localization applications.