Wenjuan Zhao

TL;DR: The wafer-scale epitaxial growth of highly oriented continuous and uniform monolayer MoS2 films on single-crystalline sapphire wafers by chemical vapor deposition (CVD) method would facilitate the scalable fabrication of various electronic, valleytronic, and optoelectronic devices for practical applications.

TL;DR: In this article, a contamination-free, one-step and universal Au-assisted mechanical exfoliation method was proposed to isolate 40 types of single-crystalline monolayers, including elemental two-dimensional crystals, metal-dichalcogenides, magnets and superconductors.

TL;DR: High-resolution laser-based angle-resolved photoemission measurements on the electronic structure and its detailed temperature evolution of ZrTe5 provide direct electronic evidence on the temperature-induced Lifshitz transition, which gives a natural understanding on underlying origin of the resistivity anomaly in Zr Te5.

TL;DR: A one-step, contamination-free, Au-assisted mechanical exfoliation method for 2D materials, and isolate 40 types of single-crystalline monolayers, including elemental 2D crystals, metal-dichalcogenides, magnets and superconductors with millimetre size is developed.

TL;DR: In this article, the authors used laser-based angle-resolved photoemission (ARPES) measurements with unprecedentedly high resolution to uncover electronic evidence of type II semimetal state in MoTe2.