Xiaozhi Xu

TL;DR: In this article, the growth of a single-crystal graphene film of 5 × 50 cm2 dimension with > 99% ultra-highly oriented grains was achieved by using a temperature gradient-driven annealing technique.

TL;DR: The epitaxial growth of large single-crystal hexagonal boron nitride monolayers on low-symmetry copper foils is demonstrated and is expected to facilitate the wide application of 2D devices and lead to the epitaxials growth of broad non-centrosymmetric 2D materials, such as various transition-metal dichalcogenides20–23, to produce large single crystals.

TL;DR: The wafer-scale epitaxial growth of highly oriented continuous and uniform monolayer MoS2 films on single-crystalline sapphire wafers by chemical vapor deposition (CVD) method would facilitate the scalable fabrication of various electronic, valleytronic, and optoelectronic devices for practical applications.

TL;DR: It is shown that single-crystal graphene can be grown on copper foils with a growth rate of 60 μm-1, and single- Crystal graphene domains with a lateral size of 0.3 mm are able to be grown with just 5 s.