E
E. Kapetanakis
Researcher at Mediterranean University
Publications - 29
Citations - 748
E. Kapetanakis is an academic researcher from Mediterranean University. The author has contributed to research in topics: Ion implantation & Non-volatile memory. The author has an hindex of 13, co-authored 29 publications receiving 727 citations. Previous affiliations of E. Kapetanakis include American Hotel & Lodging Educational Institute & Technological Educational Institute of Crete.
Papers
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Journal ArticleDOI
Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si + implantation and annealing
E. Kapetanakis,Pascal Normand,Dimitris Tsoukalas,Konstantinos Beltsios,J. Stoemenos,S. Zhang,J. A. van den Berg +6 more
TL;DR: In this article, the potential of thin SiO2 oxides implanted by very low energy (1 keV) Si ions and subsequently annealed are explored with regards to their potential as active elements of memory devices.
Journal ArticleDOI
Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis
Pascal Normand,E. Kapetanakis,Panagiotis Dimitrakis,Dimitris Tsoukalas,Konstantinos Beltsios,Nikolay Cherkashin,Caroline Bonafos,Gérard Benassayag,H. Coffin,Alain Claverie,V. Soncini,Aditya Agarwal,M. Ameen +12 more
TL;DR: In this paper, the effect of annealing in diluted oxygen versus inert environment on the structural and electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals fabricated by very low-energy silicon implantation (1 keV) is reported.
Journal ArticleDOI
Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis
TL;DR: In this article, the dependence of implantation dose on the charge storage characteristics of large-area n-channel metaloxide-semiconductor field effect transistors with 1-keV Si+-implanted gate oxides was investigated.
Journal ArticleDOI
Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis
Panagiotis Dimitrakis,E. Kapetanakis,Dimitris Tsoukalas,D. Skarlatos,Caroline Bonafos,G Ben Asssayag,Alain Claverie,Michele Perego,Marco Fanciulli,V. Soncini,R Sotgiu,A. Agarwal,M. Ameen,Ch. Sohl,Pascal Normand +14 more
TL;DR: Si-nanocrystal memory devices aiming at lowvoltage non-volatile memory applications are explored in this paper, where a single metaloxide-semiconductor field effect transistor with silicon nanocrystals fabricated through ultra-low energy (1 keV) Si implantation of the gate oxide (7 nm in thickness) and subsequent thermal annealing.
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Vertical devices of self-assembled hybrid organic/inorganic monolayers based on tungsten polyoxometalates
Eleni Makarona,E. Kapetanakis,D. Velessiotis,A. M. Douvas,Panagiotis Argitis,Pascal Normand,Teodor Gotszalk,M. Woszczyna,Nikos Glezos +8 more
TL;DR: In this article, metal-insulator-semiconductor (MIS) devices containing self-assembled monolayers (SAM) of tungsten polyoxometalates (POMs) have been fabricated with a CMOS-compatible process.