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E. Kapetanakis

Researcher at Mediterranean University

Publications -  29
Citations -  748

E. Kapetanakis is an academic researcher from Mediterranean University. The author has contributed to research in topics: Ion implantation & Non-volatile memory. The author has an hindex of 13, co-authored 29 publications receiving 727 citations. Previous affiliations of E. Kapetanakis include American Hotel & Lodging Educational Institute & Technological Educational Institute of Crete.

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Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si + implantation and annealing

TL;DR: In this article, the potential of thin SiO2 oxides implanted by very low energy (1 keV) Si ions and subsequently annealed are explored with regards to their potential as active elements of memory devices.
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Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis

TL;DR: In this paper, the effect of annealing in diluted oxygen versus inert environment on the structural and electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals fabricated by very low-energy silicon implantation (1 keV) is reported.
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Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis

TL;DR: In this article, the dependence of implantation dose on the charge storage characteristics of large-area n-channel metaloxide-semiconductor field effect transistors with 1-keV Si+-implanted gate oxides was investigated.
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Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis

TL;DR: Si-nanocrystal memory devices aiming at lowvoltage non-volatile memory applications are explored in this paper, where a single metaloxide-semiconductor field effect transistor with silicon nanocrystals fabricated through ultra-low energy (1 keV) Si implantation of the gate oxide (7 nm in thickness) and subsequent thermal annealing.
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Vertical devices of self-assembled hybrid organic/inorganic monolayers based on tungsten polyoxometalates

TL;DR: In this article, metal-insulator-semiconductor (MIS) devices containing self-assembled monolayers (SAM) of tungsten polyoxometalates (POMs) have been fabricated with a CMOS-compatible process.