Showing papers by "Emmanuel Dubois published in 2012"
TL;DR: In this article, a generic formulation for low-frequency noise in Schottky-barrier-based field effect transistors (SB-FETs) is proposed, which can be applied to any diffusive SB-based FET.
Abstract: Investigation of low-frequency noise in nanoscale Schottky-barrier (SB)-based field-effect transistors (SB-FETs) is of prime importance due to its large amplitude in emerging bottom-up devices. In addition, noise can give additional information on charge transport mechanisms. In this paper, we study the 1/f noise in nanoscale silicon-on-insulator SB-FETs. An unexpected feature is the clear contribution of the SB to the noise even if the barrier height is lower than 100 meV. Barrier modulation techniques such as dopant segregation are used to tune the barrier height. We propose a generic formulation for low-frequency noise that is applicable to any diffusive SB-FETs.
20 citations
TL;DR: Based on the experimentally extracted etch rate of unimplanted and implanted silicon-dioxide, the patterning of the sacrificial layer can be predicted by simulation as discussed by the authors, which is of interest to greatly reduce the underetch of microelectromechanical system anchors.
14 citations
TL;DR: In this paper, the authors investigate the silicide/Si nanowire (Si NW) interface properties based on a detailed char-acterization of PtSi/NW nanocontacts.
11 citations
01 Mar 2012
TL;DR: In this article, the performance of 65nm SOI n-MOSFETs, initially fabricated on rigid substrate and subsequently reported on flexible substrate (plastic), is presented for the first time.
Abstract: In this paper, high frequency (HF) noise performance of 65nm SOI n-MOSFETs, initially fabricated on rigid substrate and subsequently reported on flexible substrate (plastic), is presented for the first time. AC and noise performance is extracted from S-parameters measurements performed up to 110 GHz and noise measurements in 6–40 GHz frequency range, respectively. Almost no degradation has been observed between the S parameters measured on SOI rigid 65 nm transistors (referred as Rigid SOI-MOS) and the same thinned transistors transfer-bonded on a flexible substrate (referred to as Flex SOI-MOS). For Flex SOI-MOS, a minimum noise figure (NF min ) as low as 1.1 dB is achieved at 20 GHz, along with an associated gain (G a ) of 14.5 dB, when the transistor is biased at V ds =1.2V and I ds =270 mA/mm: so far, this performance constitutes the best reported one for flexible electronics.
7 citations
TL;DR: In this article, a two-step dry and wet etching strategy for the integration of tantalum and titanium nitride full-metal single gate is presented, which offers a perfect vertical, roughness-free sidewall and an ultra high metal/dielectric etch rate selectivity.
6 citations
TL;DR: Erbium disilicide (ErSi2-x) thin films grown by two different techniques are compared using a variety of characterization techniques, both electrical and physical as mentioned in this paper, which demonstrates a route to form ErSi2x thin films that advantageously compares with reference ultrahigh vacuum samples with less stringent fabrication conditions.
2 citations
TL;DR: In this article, the Schottky Barrier Height (SBH) lowering at the source/drain contacts appears as an inescapable requirement for CMOS downscaling in the sub-20nm regime.
1 citations
TL;DR: The underlying goal is to show how VWs can be useful for telescope maintenance by providing an intuitive means of complex data visualization and inference, equipment's teleoperation and by becoming a future platform for technical training and museographic Serious Games.
01 Jan 2012
TL;DR: In this article, the authors present the ongoing development of a Serious Application towards a 3D Virtual World (VW) for Telescope Complex Systems (TCS) by providing an intuitive means of complex data visualization and inference.
Abstract: This paper summarizes the ongoing development of a Serious Application towards a 3D Virtual World (VW) for Telescope Complex Systems (TCS). Specifically, the underlying goal is to show how VWs can be useful for telescope maintenance by providing an intuitive means of complex data visualization and inference, equipment's teleoperation and by becoming a future platform for technical training and museographic Serious Games.