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Open AccessJournal ArticleDOI

Anisotropic vapor HF etching of silicon dioxide for Si microstructure release

Vikram Passi, +8 more
- 01 Jul 2012 - 
- Vol. 95, pp 83-89
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TLDR
Based on the experimentally extracted etch rate of unimplanted and implanted silicon-dioxide, the patterning of the sacrificial layer can be predicted by simulation as discussed by the authors, which is of interest to greatly reduce the underetch of microelectromechanical system anchors.
About: 
This article is published in Microelectronic Engineering.The article was published on 2012-07-01 and is currently open access. It has received 14 citations till now. The article focuses on the topics: Buffered oxide etch & Hydrofluoric acid.

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Citations
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Journal ArticleDOI

Hybrid Integration of Magnetoresistive Sensors with MEMS as a Strategy to Detect Ultra-Low Magnetic Fields.

Joao Valadeiro, +5 more
- 11 May 2016 - 
TL;DR: How magnetoresistive sensors can be integrated with microelectromechanical systems (MEMS) devices enabling the mechanical modulation of DC or low frequency external magnetic fields to high frequencies using MEMS structures incorporating magnetic flux guides is described.
Journal ArticleDOI

Strain in silicon nanowire beams

Ferran Ureña, +5 more
- 04 Dec 2012 - 
TL;DR: In this paper, an excellent agreement of strain determined by two non-destructive characterization techniques, Raman spectroscopy and mechanical displacement using scanning electron microscopy (SEM) markers, is found for all the sample lengths and widths.
Journal ArticleDOI

Chemical purification processes of the natural crystalline flake graphite for Li-ion Battery anodes

Allah D. Jara, +2 more
- 01 Dec 2020 - 
TL;DR: In this paper, the effect of acid species, liquid-to-solid ratio, reaction time, and temperature on the carbon content (CC) of natural crystalline flake graphite in Ethiopia was investigated.
Journal ArticleDOI

The influence of hydrofluoric acid etching processes on the photocatalytic hydrogen evolution reaction using mesoporous silicon nanoparticles.

Sarah A. Martell, +2 more
- 24 Jun 2020 - 
TL;DR: The response of the photocatalytic activity of mp-Si nanoparticles to a series of HF acid treatments was investigated and it was found that morphological damage and the presence of byproducts in the pores likely result in a lowering of the H2 evolution rate.
Journal ArticleDOI

Manufacturing Issues of BEOL CMOS-MEMS Devices

Juan Valle, +3 more
- 07 Jun 2021 - 
TL;DR: In this article, the main issues affecting CMOS-MEMS high-yield manufacturing regarding the silicon oxide as a sacrificial material, the passivation as a release mask, the BEOL as structural material for MEMS design and the aluminum-sputtering as a sealing layer for the MEMS cavity were identified.
References
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Book

Springer Handbook of Nanotechnology

Bharat Bhushan
TL;DR: In this paper, Lane et al. present a detailed overview of various aspects of micro-nodes and their application in data storage applications, including the development of the "Millipede" data-storage system.
Journal ArticleDOI

Surface topography evolution and fatigue fracture in polysilicon MEMS structures

Seyed Allameh, +4 more
- 25 Jun 2003 - 
TL;DR: In this article, the initial stages of fatigue are associated with stress-assisted surface topography evolution and the thickening of SiO/sub 2/ layers that form on the unpassivated polysilicon surfaces and crack/notch faces.
Journal ArticleDOI

Use of a photoresist sacrificial layer with SU-8 electroplating mould in MEMS fabrication

In-Hyouk Song, +1 more
- 01 Nov 2003 - 
TL;DR: In this paper, new processes have been developed to fabricate micromechanical components and systems that utilize two different photoresists (Shipley S1813 and Hoechst AZ P4620) in conjunction with SU-8 photoresist used as an electroplating mold.
Journal ArticleDOI

A vapour etching technique for the photolithography of silicon dioxide

P.J. Holmes, +1 more
- 01 Nov 1966 - 
TL;DR: In this paper, the vapour of hydrofluoric acid attacks silicon dioxide at room temperatures, at a rate comparable to that of the buffered solution of the acid normally used as the etchant for the photolithographic stage of planar silicon device technology.
Proceedings ArticleDOI

Photoresist as a sacrificial layer by dissolution in acetone

K. Walsh, +2 more
TL;DR: In this article, a detailed study of sacrificial layer dissolution of photoresist by acetone in microchannels was performed and the effects of channel geometry and photoresists characteristics such as thermal cycles and UV exposure were considered and tested.