E
Eric R. Heller
Researcher at Wright-Patterson Air Force Base
Publications - 88
Citations - 3503
Eric R. Heller is an academic researcher from Wright-Patterson Air Force Base. The author has contributed to research in topics: High-electron-mobility transistor & Gallium nitride. The author has an hindex of 24, co-authored 88 publications receiving 2523 citations. Previous affiliations of Eric R. Heller include University of Alabama in Huntsville & Wright State University.
Papers
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Journal ArticleDOI
Worst-Case Bias for High Voltage, Elevated-Temperature Stress of AlGaN/GaN HEMTs
Pan Wang,X. Li,En Xia Zhang,Rong Jiang,Michael W. McCurdy,B. S. Poling,Eric R. Heller,Ronald D. Schrimpf,Daniel M. Fleetwood +8 more
TL;DR: In this paper, the effects of high-field stress are evaluated for industrial-quality AlGaN/GaN HEMTs as a function of bias and temperature, indicating the presence of acceptor-like and donor-like traps in these devices.
Journal ArticleDOI
Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps
A. Sasikumar,Aaron R. Arehart,Glen D. Via,B. Winningham,B. Poling,Eric R. Heller,Steven A. Ringel +6 more
TL;DR: The results demonstrate the importance of discriminating between traps throughout the entire bandgap with regard to the relative roles of individual traps on degradation of GaN HEMTs after ALT.
Journal ArticleDOI
Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions
G. M. Foster,G. Faber,Yu-Feng Yao,Chih-Chung Yang,Eric R. Heller,David C. Look,David C. Look,David C. Look,Leonard J. Brillson +8 more
TL;DR: In this paper, a 5-nm-thick highly Ga-doped ZnO (GZO) layer grown by molecular beam epitaxy at 250 °C on an undoped buffer layer transfer to the ZnOs (Debye leakage), causing the measured Hall-effect mobility (μH) of the GZO/ZnO combination to remarkably increase from 34 cm2/V
Proceedings ArticleDOI
Simple ohmic contact formation in HEMT structures: application to AlGaN/GaN
Clarissa D. Vazquez-Colon,Clarissa D. Vazquez-Colon,David C. Look,David C. Look,Eric R. Heller,John S. Cetnar,Arturo A. Ayon +6 more
TL;DR: In this article, the authors investigated contacts with the metal directly contacting the 2DEG in the GaN, about 20 nm below the top surface, using a 10mm × 10mm sample composed of 3nm-GaN/16-nm-Al0.27Ga0.73N/1-nm aln/1.8-μm-aln (Fe-doped).
Journal ArticleDOI
Performance of commercial foundry-level AlGaN/GaN HEMTs after hot electron stressing
TL;DR: Little permanent degradation is observed due to hot electron effects in GaN HEMTs at these extreme operating conditions and it is inferred that other considerations, such as key dimensions in channel or peak electric field, are more relevant to physics of failure than drain bias alone.