E
Eric R. Heller
Researcher at Wright-Patterson Air Force Base
Publications - 88
Citations - 3503
Eric R. Heller is an academic researcher from Wright-Patterson Air Force Base. The author has contributed to research in topics: High-electron-mobility transistor & Gallium nitride. The author has an hindex of 24, co-authored 88 publications receiving 2523 citations. Previous affiliations of Eric R. Heller include University of Alabama in Huntsville & Wright State University.
Papers
More filters
Journal ArticleDOI
Optimization of absorption in InAs/InxGa1-xSb superlattices for long-wavelength infrared detection
TL;DR: In this paper, the linear absorption coefficient of InAs/In x Ga 1-x Sb superlattices is optimized based on an 8×8 envelope function approximation (EFA) model.
Journal ArticleDOI
Simulation of Life Testing Procedures for Estimating Long-Term Degradation and Lifetime of AlGaN/GaN HEMTs
TL;DR: In this paper, a 3D thermal simulation of long-term degradation in AlGaN/GaN HEMTs for high-power applications is reported, in which temperature evolves over time as the local degradation rate varies within the modeled device based on the local temperature of the degrading region (i.e., the channel).
Journal ArticleDOI
A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Sukwon Choi,Samuel Graham,Srabanti Chowdhury,Eric R. Heller,Marko J. Tadjer,Gilberto Moreno,Sreekant Narumanchi +6 more
TL;DR: In this article, the need and process for the "electro-thermal co-design" of laterally configured ultra-wide bandgap (UWBG) electronic devices and thermal characterization methods, device thermal modeling practices, and both device and package-level thermal management solutions are discussed.
Journal ArticleDOI
Superlattice parameters for optimum absorption in inas/inxga1-xsb superlattice infrared detectors
TL;DR: In this paper, the linear absorption coefficient of InAs/InxGa1−xSb superlattices is optimized with respect to layer widths, indium content, substrate type and substrate orientation, interface type, and choice of buffer layers based on a model envelope function approach.
Proceedings ArticleDOI
Fast transient thermoreflectance CCD imaging of pulsed self heating in AlGaN/GaN power transistors
TL;DR: In this paper, the authors used CCD imaging with submicron spatial resolution and 50 millikelvin temperature resolution to study fast transient heating in gallium nitride high electron mobility power transistors (GaN HEMTs) on silicon carbide substrate.