E
Evelyn L. Hu
Researcher at University of California, Santa Barbara
Publications - 290
Citations - 10338
Evelyn L. Hu is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Quantum well & Etching (microfabrication). The author has an hindex of 46, co-authored 286 publications receiving 10021 citations. Previous affiliations of Evelyn L. Hu include California NanoSystems Institute.
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Quantum nature of a strongly coupled single quantum dot–cavity system
K. Hennessy,Antonio Badolato,Martin Winger,Dario Gerace,Mete Atatüre,S. Gulde,Stefan Fält,Evelyn L. Hu,Atac Imamoglu +8 more
TL;DR: Observations unequivocally show that quantum information tasks are achievable in solid-state cavity QED by observing quantum correlations in photoluminescence from a photonic crystal nanocavity interacting with one, and only one, quantum dot located precisely at the cavity electric field maximum.
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Selection of peptides with semiconductor binding specificity for directed nanocrystal assembly
TL;DR: In this article, the authors used combinatorial phage display libraries to evolve peptides that bind to a range of semiconductor surfaces with high specificity, depending on the crystallographic orientation and composition of the structurally similar materials.
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Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
Shigefusa F. Chichibu,Amber C. Abare,M. S. Minsky,Stacia Keller,S. B. Fleischer,John E. Bowers,Evelyn L. Hu,Umesh K. Mishra,Larry A. Coldren,Steven P. DenBaars,T. Sota +10 more
TL;DR: In this paper, the emission mechanisms of strained InxGa1−xN quantum wells (QWs) were shown to vary depending on the well thickness, L, and x. The absorption edge was modulated by the quantum confined Stark effect and quantum confined Franz-Keldysh effect (QCFK) for the wells, in which, for the first approximation, the product of the piezoelectric field, FPZ and L exceed the valence band discontinuity, ΔEV.
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Room-temperature continuous-wave lasing in GaN/InGaN microdisks
TL;DR: In this article, the authors report fabrication and optical measurements of GaN-based microdisk lasers with a very low threshold of 300 W cm−2, orders of magnitude lower than any previous GaN microdisk laser.
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Cavity-quantum electrodynamics using a single InAs quantum dot in a microdisk structure
Alper Kiraz,Peter Michler,Christoph Becher,Bruno Gayral,Atac Imamoglu,Lidong Zhang,Evelyn L. Hu,Winston V. Schoenfeld,Pierre Petroff +8 more
TL;DR: In this paper, the authors investigate cavity-quantum electrodynamics (QED) effects in an all-semiconductor nanostructure by tuning a single self-assembled InAs quantum dot into resonance with a high quality factor microdisk whispering gallery mode (WGM).