Carlo De Santi

TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.

TL;DR: In this paper, the advantages and limitations of the current-transient methods used for the study of the deep levels in GaN-based high-electron mobility transistors (HEMTs), by evaluating how the procedures adopted for measurement and data analysis can influence the results of the investigation.

TL;DR: In this article, the state of the art for the most important aspects of UV emitters, their challenges and their outlook for future developments are summarized. But, the development since the first realization of UV electroluminescence in the 1970s shows that an improvement in understanding and technology allows the performance ofUV emitters to be pushed far beyond the current state.

TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.

TL;DR: In this paper, the authors demonstrate the time-dependent failure of GaN-on-Si power high-electron-mobility transistors with p-GaN gate, submitted to a forward gate stress.