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G

G. Mirabelli

Researcher at Sapienza University of Rome

Publications -  603
Citations -  52805

G. Mirabelli is an academic researcher from Sapienza University of Rome. The author has contributed to research in topics: Large Hadron Collider & Lepton. The author has an hindex of 104, co-authored 589 publications receiving 50781 citations. Previous affiliations of G. Mirabelli include Radboud University Nijmegen.

Papers
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Journal ArticleDOI

Measurement of the Michel parameters and the average tau-neutrino helicity from tau decays at LEP

M. Acciarri, +436 more
- 22 Oct 1998 - 
TL;DR: In this paper, the Michel parameters and the average tau-neutrino helicity have been measured by analysing tau decay spectra in 147 pb −1 of data collected by the L3 detector.

Measurement of the top-quark mass in the fully hadronic decay channel from ATLAS data at \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\sqrt{s}=7\mathrm{\,TeV}$$\end{document}s=7TeV

Georges Aad, +2872 more
TL;DR: In this article, the mass of the top quark is measured in a data set corresponding to 4.7 TeV collected by the ATLAS detector at the LHC, and a binned likelihood fit is obtained from template fits to the ratio of three-jet to dijet mass.
Journal ArticleDOI

Determination of γ/Z interference in e+ e- annihilation at LEP

M. Acciarri, +404 more
- 14 Sep 2000 - 
TL;DR: In this article, an S-Matrix ansatz is used to determine the mass and width of the Z boson, as well as the contributions of γ/Z interference and z boson exchange to fermion-pair production.

Measurement of the cross section for the production of a W boson in association with b-jets in pp collisions at √s = 7 TeV with the ATLAS detector

Georges Aad, +3010 more
TL;DR: A measurement of the cross section for the production of a W boson with one or two jets, of which at least one must be a b-jet, in pp collisions at root s = 7 TeV was presented in this paper.
Proceedings ArticleDOI

Design enablement of CFET devices for sub-2nm CMOS nodes

TL;DR: In this paper , the authors review the significant benefits of complementary FETs and the challenges that arise with their use, focusing on the standard cell design challenges as well as the physical implementation.