The emerging field of plasmonics has yielded methods for guiding and localizing light at the nanoscale, well below the scale of the wavelength of light in free space. Now plasmonics researchers are turning their attention to photovoltaics, where design approaches based on plasmonics can be used to improve absorption in photovoltaic devices, permitting a considerable reduction in the physical thickness of solar photovoltaic absorber layers, and yielding new options for solar-cell design. In this review, we survey recent advances at the intersection of plasmonics and photovoltaics and offer an outlook on the future of solar cells based on these principles.

Plasmonics for improved photovoltaic devices

Thin-film structures can reduce the cost of solar power by using inexpensive substrates and a lower quantity and quality of semiconductor material. However, the resulting short optical path length and minority carrier diffusion length necessitates either a high absorption coefficient or excellent light trapping. Semiconducting nanowire arrays have already been shown to have low reflective losses compared to planar semiconductors, but their light-trapping properties have not been measured. Using optical transmission and photocurrent measurements on thin silicon films, we demonstrate that ordered arrays of silicon nanowires increase the path length of incident solar radiation by up to a factor of 73. This extraordinary light-trapping path length enhancement factor is above the randomized scattering (Lambertian) limit (2n2 ∼ 25 without a back reflector) and is superior to other light-trapping methods. By changing the silicon film thickness and nanowire length, we show that there is a competition between impr...

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Light Trapping in Silicon Nanowire Solar Cells

Solar cells based on organometallic halide perovskite absorber layers are emerging as a high-performance photovoltaic technology. Using highly sensitive photothermal deflection and photocurrent spectroscopy, we measure the absorption spectrum of CH3NH3PbI3 perovskite thin films at room temperature. We find a high absorption coefficient with particularly sharp onset. Below the bandgap, the absorption is exponential over more than four decades with an Urbach energy as small as 15 meV, which suggests a well-ordered microstructure. No deep states are found down to the detection limit of ∼1 cm–1. These results confirm the excellent electronic properties of perovskite thin films, enabling the very high open-circuit voltages reported for perovskite solar cells. Following intentional moisture ingress, we find that the absorption at photon energies below 2.4 eV is strongly reduced, pointing to a compositional change of the material.

Organometallic Halide Perovskites: Sharp Optical Absorption Edge and Its Relation to Photovoltaic Performance

The use of silicon nanostructures in solar cells offers a number of benefits, such as the fact they can be used on flexible substrates. A silicon wire-array structure, containing reflecting nanoparticles for enhanced absorption, is now shown to achieve 96% peak absorption efficiency, capturing 85% of light with only 1% of the silicon used in comparable commercial cells. Si wire arrays are a promising architecture for solar-energy-harvesting applications, and may offer a mechanically flexible alternative to Si wafers for photovoltaics1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17. To achieve competitive conversion efficiencies, the wires must absorb sunlight over a broad range of wavelengths and incidence angles, despite occupying only a modest fraction of the array’s volume. Here, we show that arrays having less than 5% areal fraction of wires can achieve up to 96% peak absorption, and that they can absorb up to 85% of day-integrated, above-bandgap direct sunlight. In fact, these arrays show enhanced near-infrared absorption, which allows their overall sunlight absorption to exceed the ray-optics light-trapping absorption limit18 for an equivalent volume of randomly textured planar Si, over a broad range of incidence angles. We furthermore demonstrate that the light absorbed by Si wire arrays can be collected with a peak external quantum efficiency of 0.89, and that they show broadband, near-unity internal quantum efficiency for carrier collection through a radial semiconductor/liquid junction at the surface of each wire. The observed absorption enhancement and collection efficiency enable a cell geometry that not only uses 1/100th the material of traditional wafer-based devices, but also may offer increased photovoltaic efficiency owing to an effective optical concentration of up to 20 times.

Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications

Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, Sn02, or In203. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, Sn02or In2O3, the substantially insulating ZnO, Sn02, or In203 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.

Transistor structures and methods for making the same

The effect of thermal and structural disorder on the electronic structure of hydrogenated amorphous silicon is investigated by measurement of the shape of the optical absorption edge as a function of temperature and thermal evolution of hydrogen. The data are consistent with the idea that the thermal and structural disorder are additive, and suggest that the disorder, rather than the hydrogen content, is the fundamental determining factor in the optical band gap.

Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon

We adopt a statistical mechanical approach toward the optics of textured and inhomogeneous optical sheets. As a general rule, the local light intensity in such a medium will tend to be 2 n^{2}(x) times greater than the externally incident light intensity, where n(x) is the local index of refraction in the sheet. This enhancement can contribute toward a 4 n^{2}(x) increase in the effective absorption of indirect-gap semiconductors like crystalline silicon.

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Intensity enhancement in textured optical sheets for solar cells

The detailed balance method for calculating the radiative recombination limit to the performance of solar cells has been extended to include free carrier absorption and Auger recombination in addition to radiative losses. This method has been applied to crystalline silicon solar cells where the limiting efficiency is found to be 29.8 percent under AM1.5, based on the measured optical absorption spectrum and published values of the Auger and free carrier absorption coefficients. The silicon is assumed to be textured for maximum benefit from light-trapping effects.

George Dewey Cody

Papers

Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon

Intensity enhancement in textured optical sheets for solar cells

Limiting efficiency of silicon solar cells

Optical characterization of amorphous silicon hydride films

Optical reflectance and transmission of a textured surface