Showing papers in "Solar Cells in 1980"

TL;DR: In this paper, the optical properties of thin a-SiHx films were studied and the intrinsic optical limitations on the performance of the SiHx cells were defined for the absorption range 10−1-106 cm−1.

TL;DR: In this article, the effect of electric field amplitude, dielectric relaxation, and the intensity and absorption length of the excitation light on the shape of the photocurrent transients is discussed.

TL;DR: In this article, a theoretical and experimental analysis of the properties of an n + -p-n + transistor-like structure called Transcell is presented, which enables us to design optimum metallization grid patterns which reduce the effect of the series resistance to acceptable levels.

TL;DR: In this article, a consistent account of the basic operation of the CdS/Cu2S solar cell as a heterojunction dominated by interface recombination is presented, and the model is in good agreement with the results seen in high efficiency cells and from it the increased open-circuit voltage seen in (CdZn)S/cu2S cells can be predicted.

TL;DR: In this article, the vibrational frequencies and oscillator strengths for the bond-stretching vibrations are in part determined by the partial charges on the hydrogen atoms, and problems relating to the use of the integrated absorption in these modes as a way of determining the total hydrogen concentration are discussed.

TL;DR: Optical emission spectroscopy (OES) of a silane glow discharge reveals the presence of the species Si, SiH and N 2 under various processing conditions during the plasma deposition of hydrogenated amorphous silicon (a-Si:H) alloys as mentioned in this paper.

TL;DR: A detailed study of air mass one (AM1) shortcircuit currents and of the carrier collection efficiencies was carried out on discharge-produced hydrogenated amorphous silicon (a-SiHx) films as discussed by the authors.

TL;DR: In this article, the 15 N hydrogen profiling technique has been used to measure quantitatively the hydrogen concentration versus depth in any solid, and the results of these measurements are summarized and discussed in relationship to the results obtained by other analytic techniques.

TL;DR: In this article, a model of a thermophotovoltaic (TPV) converter is presented, where the authors focused light into a spherical cavity made of tungsten or of ytterbium oxide, thereby heating the cavity, and the spectral region of the incandescent radiation emitted by the cavity in the range 0.6 − 1.1 μm was directed onto a distribution of cells facing the radiator.

TL;DR: In this article, the authors briefly describe spin resonance techniques ( e.g., light-induced ESR, spin-dependent luminescence and photoconductivity, and electron-nuclear double resonance) and relevant experimental parameters (e.g. spin density, line shape, hyperfine coupling, exchange interaction etc.).

TL;DR: Secondary ion mass spectrometry (SIMS) was used to characterize glow-discharge-deposited hydrogenated amorphous silicon (a-Si:H) as a function of depth.

TL;DR: In this paper, the field effect measured the density of gap states and the magnitude of the mobility gap in an amorphous silicon film, and the validity of several assumptions needed for interpreting field effect measurements is questioned.

TL;DR: In this paper, the development of the Zn x Cd 1−x S Cu 2 S thin film solar cell is reviewed and the properties and limiting mechanisms of the junction are discussed and compared with those of the CdS/Cu2S cell.

TL;DR: In this article, the majority carrier drift mobility for photon energies between 0.58 and 2.0 eV in hydrogenated amorphous silicon solar cell structures has been investigated and it is shown that the majority carriers are excited to the same states irrespective of the excitation energy.

TL;DR: The use of the electron-beam-induced current mode of the scanning electron microscope for recombination studies in polycrystalline silicon solar cells is reviewed in this article, where the potential and some limits of the technique are discussed.

TL;DR: In this paper, the authors summarize the results on thickness and surface variations in the conductivity and photoconductivity of phosphorus-doped n-type hydrogenated amorphous silicon films.

TL;DR: In this paper, the performance of a-Si solar cells was analyzed and it was shown that optimized design and engineering can lead to significant increases in efficiency to about 9-11%. But the performance was not analyzed in terms of the number of photons passing through the cells.

TL;DR: In this article, a general discussion of the physics of amorphous semiconductors is presented, and tight-binding calculations of the lowest energy point defects to be expected in chalcogenide, pnictide and tetrahedrally bonded amorphus are presented, including intimate charged pairs.

TL;DR: In this paper, the state of knowledge concerning the following defects in silicon is briefly surveyed: substitutional impurities, vacancy-related defects, interstitial-related defect, defect pairs.

TL;DR: In this paper, electrophoretic deposition on metal, ion-plated plastic and conducting semiconductor oxide on glass anodes was used to produce thin film CdS solar cells.

TL;DR: In this article, the fabrication of improved selenium solar cells with an exposed area efficiency of 3.72% and an engineering efficiency of 4.04% was reported, and the stability and ease of fabrication made them candidates for low cost solar cells.

TL;DR: In this article, a review of MIS- and SIS-structured solar cells and the possible advantages of these structures for use with thin-film polycrystalline silicon substrates is presented.

TL;DR: In this paper, the authors used both optical excitation from a tunable pulsed dye laser and classical voltage pulse trap filling to create thermally stimulated current and capacitance transients from gap states located in the space charge layer of Schottky barriers formed on these samples.

TL;DR: In this article, the spectral responses of these cells were dependent on the illumination level and the electrical bias, and the result is that the cells operate as a switch activated by CdS band gap radiation.

TL;DR: In this article, it is shown that polycrystalline silicon films can be characterized by an "average" minority carrier diffusion length, which is a measure of the influence of defects and grain boundaries on photovoltaic mechanisms.

TL;DR: In this paper, an analysis of the saturation current in solar cells is presented and the authors conclude that the saturation factor A which appears in the Shockley equation I o = A exp (−E g /kT) is material independent and that A has a value 2.95 × 10 5 A per unit area (1 cm2) of the cell.

TL;DR: The xerographic discharge technique provides an additional important tool for determining fundamental photoelectronic properties of hydrogenated amorphous silicon (a-Si:H) as discussed by the authors, and the specific and complementary advantages of this technique over other electrical measurements are discussed and illustrated by recent measurements on a-Si-H structures.

TL;DR: In this paper, an analysis of the energy required to produce amorphous silicon MIS solar cells is given, including machinery, materials and processing, with reasonable assumptions of the large-scale production rate.

TL;DR: A review of the current state of the field of structural studies of hydrogenated amorphous silicon is given in this paper, with particular emphasis on the suitability of the various structural probes described for routine characterization of material for photovoltaic applications.