Journal ArticleDOI
Optical characterization of amorphous silicon hydride films
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In this paper, the optical properties of thin a-SiHx films were studied and the intrinsic optical limitations on the performance of the SiHx cells were defined for the absorption range 10−1-106 cm−1.About:
This article is published in Solar Cells.The article was published on 1980-11-01. It has received 221 citations till now. The article focuses on the topics: Amorphous silicon & Photoconductivity.read more
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Patent
Transistor structures and methods for making the same
John F. Wager,Randy Hoffman +1 more
TL;DR: In this paper, the field effect transistors (FET) have been extended to include a gate insulator layer comprising a substantially transparent material adjacent to the channel layer so as to define a channel layer/gate insulator interface.
Journal ArticleDOI
XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's
TL;DR: In this article, a 500-1000-A-thick a-Si:H was successfully crystallized by XeCl excimer laser (308nm) annealing without heating a glass substrate.
Journal ArticleDOI
Luminescence and recombination in hydrogenated amorphous silicon
TL;DR: In this paper, a detailed discussion of the various competing radiative and non-radiative recombination mechanisms for hydrogenated amorphous silicon prepared by glow discharge and sputtering is given.
Journal ArticleDOI
The structure and properties of nanosize crystalline silicon films
TL;DR: In this paper, the structure and physical properties of nanosize crystalline silicon films were studied by means of high-resolution electron microscopy, Raman scattering spectra, x-ray diffraction pattern, IR transmission spectra and ultraviolet ray analysis.
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Crystallized Si films by low‐temperature rapid thermal annealing of amorphous silicon
TL;DR: In this article, the authors used low-temperature rapid thermal annealing to crystallize both undoped and doped amorphous silicon (a•Si) films deposited at low temperatures.
References
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Journal ArticleDOI
Optical Properties and Electronic Structure of Amorphous Germanium
Jan Tauc,R. Grigorovici,A. Vancu +2 more
TL;DR: In this article, the optical constants of amorphous Ge were determined for the photon energies from 0.08 to 1.6 eV, and the absorption is due to k-conserving transitions of holes between the valence bands as in p-type crystals.
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Optical constants of transition metals: Ti, V, Cr, Mn, Fe, Co, Ni, and Pd
P. B. Johnson,R. W. Christy +1 more
TL;DR: In this article, the optical constants of transition metals (Ti, V, Cr, Mn, Fe, Co, Ni, Pd) were determined from reflection and transmission measurements on vacuum-evaporated polycrystalline thin films at room temperature, in the spectral range 0.5-6.5 eV.
Journal ArticleDOI
Electronic Structure of Amorphous Si from Photoemission and Optical Studies
Daniel T. Pierce,W. E. Spicer +1 more
TL;DR: In this article, photoemission from and optical studies of amorphous Si samples, carefully prepared to minimize the influence of defects, are reported, and photo emission yield and energy distribution curves were obtained from 5.5 to 11.7 eV and reflectance data were measured from 0.4 to 0.8 eV.
Journal ArticleDOI
New precision technique for measuring the concentration versus depth of hydrogen in solids
TL;DR: In this paper, a method for the measurement of the concentration of hydrogen versus depth in solids using the 1H+15N resonant nuclear reaction is discussed, which has a typical depth resolution of 50-100 A, can be used to a depth of several microns, and can measure hydrogen in concentrations of one part per thousand or greater.
Journal ArticleDOI
Optical and photoconductive properties of discharge‐produced amorphous silicon
TL;DR: In this paper, the optical and photoconductive properties of discharge-produced amorphous silicon (a•Si) of the type used in efficient thin-film solar cells have been studied as a function of a wide range of deposition conditions.