G
Graham E. Rowlands
Researcher at BBN Technologies
Publications - 47
Citations - 1805
Graham E. Rowlands is an academic researcher from BBN Technologies. The author has contributed to research in topics: Spin-transfer torque & Tunnel magnetoresistance. The author has an hindex of 20, co-authored 45 publications receiving 1554 citations. Previous affiliations of Graham E. Rowlands include Cornell University & University of California, Irvine.
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Journal ArticleDOI
Voltage-induced ferromagnetic resonance in magnetic tunnel junctions.
Jian Zhu,Jordan A. Katine,Graham E. Rowlands,Y.-J. Chen,Zheng Duan,Juan G. Alzate,Pramey Upadhyaya,Juergen Langer,Pedram Khalili Amiri,Kang L. Wang,Ilya Krivorotov +10 more
TL;DR: The measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs.
Journal ArticleDOI
Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions
P. Khalili Amiri,Zhongming Zeng,Jürgen Langer,Hui Zhao,Graham E. Rowlands,Y.-J. Chen,Ilya Krivorotov,Jian-Ping Wang,Hong-Wen Jiang,Jordan A. Katine,Yiming Huai,Kosmas Galatsis,Kang L. Wang +12 more
TL;DR: In this article, in-plane CoFeB-MgO magnetic tunnel junctions with perpendicular magnetic anisotropy in the free layer to reduce the spin transfer induced switching current were presented.
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Nanosecond-Timescale Low Energy Switching of In-Plane Magnetic Tunnel Junctions through Dynamic Oersted-Field-Assisted Spin Hall Effect.
TL;DR: The results suggest that in-plane MTJs controlled by Oersted-field-assisted spin-Hall torque are a promising candidate for both cache memory applications requiring high speed and for cryogenic memories requiring low write energies.
Journal ArticleDOI
Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
Hui Zhao,Andrew Lyle,Yisong Zhang,Pedram Khalili Amiri,Graham E. Rowlands,Zhongming Zeng,Jordan A. Katine,Hong-Wen Jiang,Kosmas Galatsis,Kang L. Wang,Ilya Krivorotov,Jian-Ping Wang +11 more
TL;DR: In this article, the authors investigated in-plane MgO-based magnetic tunnel junctions (MTJ) for the application of spin torque transfer random access memory (STT-RAM).
Journal ArticleDOI
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
Graham E. Rowlands,Talat S. Rahman,Jordan A. Katine,Jürgen Langer,Andrew Lyle,Hui Zhao,Juan G. Alzate,Alexey A. Kovalev,Yaroslav Tserkovnyak,Zhongming Zeng,Hong-Wen Jiang,Kosmas Galatsis,Yiming Huai,P. Khalili Amiri,Kang L. Wang,Ilya Krivorotov,Jian-Ping Wang +16 more
TL;DR: In this article, a spin torque memory element with an in-plane free layer and a perpendicular polarizer was proposed to increase the write speed and decrease the write energy of the element.